公开(公告)号：EP1055251A4

公开(公告)日：2005-02-16

申请号：EP99908120

申请日：1999-02-10

申请人： QUESTER TECHNOLOGY INC

发明人： FOGGIATO GIOVANNI ANTONIO ,  VELIKOV LEONID V ,  MANRIQUEZ RALPH F ,  KHAN ASHRAF R

IPC分类号： H01J65/00 ,  G03F7/20 ,  H01J61/067 ,  H01J61/26 ,  H01J61/30 ,  H01J61/52 ,  H01J65/04 ,  H01J61/06 ,  H01J61/92

CPC分类号： H01J65/046 ,  G03F7/70016 ,  H01J61/0672 ,  H01J61/26 ,  H01J61/305 ,  H01J61/526 ,  H05H1/2406 ,  H05H2001/2418 ,  H05H2001/2437

摘要： Ultraviolet and vacuum ultraviolet radiators (100) for use in the manufacture of semiconductors are provided which have improved lifetimes, improved distribution of radiation generation, improved distribution of emitted radiation, increased efficiency of radiation emission, and improved means for cooling. The radiators (100) have novel electrodes (106), novel electrode configurations, novel means for distributing plasmas between electrodes, and have novel cooling means. These features enable the miniaturization of the radiators permitting high intensity and uniform radiation exposure of planar surfaces. The radiators are used in the pre-treatment of semiconductor surfaces, the deposition of semiconductor thin films, and the post-deposition processing of semiconductor thin films.

摘要翻译： 提供了用于制造半导体的紫外线和真空紫外线辐射器，其具有改善的寿命，改善辐射发生的分布，改善发射辐射的分布，提高辐射发射的效率和改进的冷却装置。 散热器具有新颖的电极，新颖的电极结构，用于在电极之间分配等离子体的新颖手段，并具有新颖的冷却装置。 这些特征使得散热器的小型化允许平面表面的高强度和均匀的辐射曝光。 散热器用于半导体表面的预处理，半导体薄膜的沉积以及半导体薄膜的后沉积处理。