公开(公告)号：EP0293232A1

公开(公告)日：1988-11-30

申请号：EP88304841.5

申请日：1988-05-27

申请人： RAYTHEON COMPANY

发明人： Tustison, Randal W. ,  Varitimos, Thomas

IPC分类号： C30B23/02 ,  C30B29/02 ,  C23C14/46

CPC分类号： C23C14/46 ,  C30B23/002 ,  C30B23/02 ,  C30B29/02 ,  Y10T428/12528 ,  Y10T428/12681

摘要： A single crystal Fe film is deposited on a (100) gallium arsenide substrate (11) by ion beam (34) sputtering the Fe film. The sputtered Fe atoms (34) are imparted with energies in the range of about 1 electron volt to at least 10 electron volts to impart sufficient kinetic energy to said ions to allow said ions to have high surface diffusion rates, thereby permitting the atoms to be located at the proper lattice sites of the Fe crystal formed over the gallium arsenide substrate (11). The sputtering is carried out in a vacuum chamber (12) by directing a beam (33) of high energy argon ions from an ion gun (16) onto an iron target (24). The temperature of the substrate (11) is controlled by a heating coil device (26).

摘要翻译： 通过溅射Fe膜的离子束（34）将单晶Fe膜沉积在（100）砷化镓衬底（11）上。 溅射的Fe原子（34）赋予约1电子伏特至至少10电子伏特范围内的能量，以赋予所述离子足够的动能，以允许所述离子具有高的表面扩散速率，从而允许原子为 位于形成在砷化镓衬底（11）上的Fe晶体的适当晶格位置。 通过将来自离子枪（16）的高能氩离子束（33）引导到铁靶（24）上，在真空室（12）中进行溅射。 基板（11）的温度由加热线圈装置（26）控制。