公开(公告)号：EP1489646A4

公开(公告)日：2008-01-23

申请号：EP03715381

申请日：2003-03-19

申请人： RES INST INNOVATIVE TECH EARTH ,  NAT INST OF ADVANCED IND SCIEN

发明人： SAKAI K ,  OKURA S ,  SAKAMURA M ,  ABE K ,  MURATA H ,  WANI E ,  KAMEDA K ,  MITSUI Y ,  OHIRA Y ,  YONEMURA T ,  SEKIYA A

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/306 ,  H01L21/31

CPC分类号： C23C16/45593 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/02046 ,  Y02C20/30 ,  Y02P70/605

摘要： A method of cleaning a CVD apparatus that enables efficiently removing by-products, such as SiO2 and Si3N4, having stuck to and deposited on the surfaces of inside wall, electrode, etc. of a reaction chamber during the operation of film formation, and that minimizes the volume of cleaning gas discharged so as to decrease influences on global warming and other environmental matter, thereby enabling cost reduction. A CVD apparatus adapted to feed reaction gas into a reaction chamber so as to form a deposit film on a surface of substrate disposed in the reaction chamber, wherein an exhaust path for discharging exhaust gas from the inside of the reaction chamber by means of a pump is fitted with an exhaust gas reflux path for refluxing exhaust gas from a downstream side of the pump to the reaction chamber.

摘要翻译： 一种清洗CVD装置的方法，其能够有效地去除在成膜操作期间粘附并沉积在反应室的内壁，电极等的表面上的SiO 2和Si 3 N 4等副产物，并且 使排出的清洁气体量最小化，以减少对全球变暖和其他环境物质的影响，由此降低成本。 1。一种CVD装置，其特征在于，将反应气体供给到反应室内，在配置在所述反应室内的基板的表面形成堆积膜，所述排气路径利用泵从所述反应室内排出排气 配备有废气回流路径，用于将废气从泵的下游侧回流到反应室。

公开(公告)号：EP1489645A4

公开(公告)日：2008-01-23

申请号：EP03715380

申请日：2003-03-19

申请人： RES INST INNOVATIVE TECH EARTH ,  NAT INST OF ADVANCED IND SCIEN

发明人： SAKAI K ,  OKURA S ,  SAKAMURA M ,  ABE K ,  MURATA H ,  WANI E ,  KAMEDA K ,  MITSUI Y ,  OHIRA Y ,  YONEMURA T ,  SEKIYA A

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/306 ,  H01L21/31 ,  H01L21/205

CPC分类号： C23C16/45593 ,  C23C16/4405 ,  H01L21/02046 ,  Y02C20/30 ,  Y02P70/605

摘要： A method of cleaning a CVD apparatus that enables efficiently removing by-products, such as SiO2 and Si3N4, having stuck to and deposited on the surfaces of inside wall, electrode, etc. of a reaction chamber and the side wall of piping, etc. for exhaust path, etc. during the operation of film formation, and that minimizes the volume of cleaning gas discharged so as to decrease influences on global warming and other environmental matter, thereby enabling cost reduction. A CVD apparatus adapted to feed reaction gas into a reaction chamber so as to form a deposit film on a surface of substrate disposed in the reaction chamber, wherein an exhaust path for discharging exhaust gas from the inside of the reaction chamber by means of a pump is fitted with an exhaust gas reflux path for refluxing exhaust gas from a downstream side of the pump to an upstream side of the exhaust path, the exhaust gas reflux path fitted with a plasma generator.

公开(公告)号：EP1612857A4

公开(公告)日：2009-02-25

申请号：EP04720167

申请日：2004-03-12

申请人： RES INST INNOVATIVE TECH EARTH

发明人： WANI E ,  SAKAI K ,  OKURA S ,  SAKAMURA M ,  ABE K ,  MURATA H ,  KAMEDA K

IPC分类号： H01L21/31 ,  H05H1/46 ,  C23C16/44 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  H01J37/32082

摘要： There is provided a CVD apparatus capable of efficiently removing a by-product such as SiO 2 or Si 3 N 4 which is stuck and deposited onto the surface of an internal wall, an electrode or the like in a CVD chamber in a film forming process, and furthermore, executing cleaning having a small damage over an upper electrode and a counter electrode stage (a lower electrode) and manufacturing a thin filmof high quality, and a CVD apparatus cleaning method using the same. In a CVD apparatus cleaning method of introducing a cleaning gas to carry out plasma cleaning over an inside of a CVD chamber after forming a deposited film on a surface of a substrate, a frequency of an RF to be applied to an RF electrode is switched into a first frequency to be applied for forming a film and a second frequency to be applied when executing the plasma cleaning.