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1.发明公开CVD APPARATUS HAVING MEANS FOR CLEANING WITH FLUORINE GAS AND METHOD OF CLEANING CVD APPARATUS WITH FLUORINE GAS 审中-公开随着对清洁氟气和方法用于清洁CVD设备符合GAS FLUOR MEANS化学气相淀积设备
公开(公告)号：EP1542264A4
公开(公告)日：2007-03-28
申请号：EP03712689
申请日：2003-03-13
发明人： BEPPU TATSURO , SAKAI KATSUO , OKURA SEIJI , SAKAMURA MASAJI , ABE KAORU , MURATA HITOSHI , WANI ETSUO , KAMEDA KENJI , MITSUI YUKI , OHIRA YUTAKA , YONEMURA TAISUKE , SEKIYA AKIRA
IPC分类号： H01L21/306 , B08B7/00 , C23C16/44 , H01J37/32 , H01L21/3065 , H01L21/31
CPC分类号： B08B7/0035 , C23C16/4405 , H01J37/32357 , H01J37/32862 , Y02C20/30 , Y02P70/605
摘要： A method of cleaning a CVD apparatus that enables efficiently removing by-products, such as SiO2 and Si3N4, having stuck to and deposited on the surfaces of inside wall, electrode, etc. of a reaction chamber during the operation of film formation, and that minimizes the volume of cleaning gas discharged so as to decrease influences on global warming and other environmental matter, thereby enabling cost reduction. A fluorinated compound is energized so that the fluorinated compound is reacted to thereby form fluorine gas component and components other than the fluorine gas component. The thus formed fluorine gas component and components other than the fluorine gas component are separated from each other, and the separated fluorine gas component is purified. The separated and purified fluorine gas is converted to plasma by a CVD apparatus after the operation of film formation on a substrate, which plasma removes by-products sticking to the inside of reaction chamber.
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公开(公告)号：EP1612856A4
公开(公告)日：2009-01-28
申请号：EP04720142
申请日：2004-03-12
发明人： SAKAI KATSUO , ABE KAORU , OKURA SEIJI , SAKAMURA MASAJI , MURATA HITOSHI , KAMEDA KENJI , WANI ETSUO , SEKIYA AKIRA
CPC分类号： C23C16/52 , C23C16/4405
摘要： A method of cleaning a CVD device wherein, by-products sticking to the inner wall of a reaction chamber (12) is cleaned, and the cleaning can be finished on an accurate time. The light intensity of F radicals in a reaction chamber (12) is monitored by an emission spectrometer (40). After the light intensity reaches the saturation point of light intensity, cleaning is finished in a predetermined time. The concentration of SiF4 in the exhausted gas from the reaction chamber (12) is monitored by an infrared spectroscopy (50). When the SiF4 concentration reaches a predetermined cleaning end point, the cleaning is ended. In place of the emission spectrometer (40), a mass spectrograph (70) for measuring the F-intensity in the reaction chamber (12) can be installed.
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公开(公告)号：EP1304731A4
公开(公告)日：2003-07-30
申请号：EP02705296
申请日：2002-03-18
发明人： SHIBATA KOJI , TSUJI NAOTO , MURATA HITOSHI , WANI ETSUO , KOSANO YOSHIHIDE
IPC分类号： H05H1/46 , B01J19/08 , C23C16/44 , H01L21/302 , H01L21/3065 , H01L21/31
CPC分类号： C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A method of cleaning in a CVD device capable of efficiently removing by-products such as SiO2 and Si3N4 attached to and deposited on the inner wall of a reaction chamber and the surfaces of an electrode when forming films, being very low in cleaning gas exhaust amount, affecting very little environments such as global warming, and contributing to cost reduction. After films are formed on a substrate by a CVD device, a fluorine-containing compound-containing fluorine-based cleaning gas is turned into plasma by a remote plasma generator , the plasma-based cleaning gas is introduced into a reaction chamber, and by-products deposited on the inside of the reaction chamber are removed.
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