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公开(公告)号：EP0545238A3
公开(公告)日：1995-04-19
申请号：EP92120034.1
申请日：1992-11-25
申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN , Nishizawa, Jun-ichi , ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI
CPC分类号： C30B25/105 , C30B23/002 , C30B23/02 , C30B29/42
摘要： Material and impurity gases are introduced into a crystal growth chamber (32) to grow a crystal film on a GaAs substrate (10). A light beam emitted from a variable-wavelength light source (35) is applied to the crystal film being grown on the substrate (10) while varying the wavelength of the light beam. The dependency, on the wavelength of the light beam, of the intensity of light reflected by the crystal film is measured, and an optimum wavelength is selected for measurement depending on the type of molecules adsorbed while the crystal film is being grown. Light is then applied at the optimum wavelength to the crystal film being grown, and a time-dependent change in the intensity of light reflected by the crystal film is measured. The rate at which the material gases are introduced into the crystal growth chamber (32) is adjusted to control the growth rate of the crystal film, the composition ratio of a mixed crystal thereof, and the density of the impurity therein.
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公开(公告)号：EP0545238B1
公开(公告)日：1999-02-24
申请号：EP92120034.1
申请日：1992-11-25
申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN , Nishizawa, Jun-ichi , ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI
CPC分类号： C30B25/105 , C30B23/002 , C30B23/02 , C30B29/42
摘要： Material and impurity gases are introduced into a crystal growth chamber to grow a crystal film on a GaAs substrate. A light beam emitted from a variable-wavelength light source is applied to the crystal film being grown on the substrate while varying the wavelength of the light beam. The dependency, on the wavelength of the light beam, of the intensity of light reflected by the crystal film is measured, and an optimum wavelength is selected for measurement depending on the type of molecules adsorbed while the crystal film is being grown. Light is then applied at the optimum wavelength to the crystal film being grown, and a time-dependent change in the intensity of light reflected by the crystal film is measured. The rate at which the material gases are introduced into the crystal growth chamber is adjusted to control the growth rate of the crystal film, the composition ratio of a mixed crystal thereof, and the density of the impurity therein.
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3.发明公开Method of epitaxially growing a semiconductor crystal 失效Verfahren zum Wachstum von Halbleiterkristall。
公开(公告)号：EP0545238A2
公开(公告)日：1993-06-09
申请号：EP92120034.1
申请日：1992-11-25
申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN , Nishizawa, Jun-ichi , ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI
CPC分类号： C30B25/105 , C30B23/002 , C30B23/02 , C30B29/42
摘要： Material and impurity gases are introduced into a crystal growth chamber (32) to grow a crystal film on a GaAs substrate (10). A light beam emitted from a variable-wavelength light source (35) is applied to the crystal film being grown on the substrate (10) while varying the wavelength of the light beam. The dependency, on the wavelength of the light beam, of the intensity of light reflected by the crystal film is measured, and an optimum wavelength is selected for measurement depending on the type of molecules adsorbed while the crystal film is being grown. Light is then applied at the optimum wavelength to the crystal film being grown, and a time-dependent change in the intensity of light reflected by the crystal film is measured. The rate at which the material gases are introduced into the crystal growth chamber (32) is adjusted to control the growth rate of the crystal film, the composition ratio of a mixed crystal thereof, and the density of the impurity therein.
摘要翻译： 将材料和杂质气体引入晶体生长室中以在GaAs衬底上生长晶体膜。 将从可变波长光源发射的光束施加到在衬底上生长的晶体膜，同时改变光束的波长。 测量由晶体膜反射的光的强度对光束的波长的依赖性，并且根据晶体膜生长时吸附的分子的种类，选择最佳的波长进行测定。 然后将光以最佳波长施加到正在生长的晶体膜上，并且测量由晶体膜反射的光的强度的时间依赖性变化。 调节将材料气体引入晶体生长室的速率，以控制晶体膜的生长速率，其混晶的组成比和其中的杂质密度。
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