公开(公告)号：EP0481965B1

公开(公告)日：1998-09-09

申请号：EP92101661.4

申请日：1987-11-18

申请人： Research Development Corporation of Japan ,  NISHIZAWA, Jun-ichi ,  Takeda, Nobuo ,  Suzuki, Soubei

发明人： Nishizawa, Junichi ,  Takeda, Nobuo ,  Suzuki, Soubei

IPC分类号： H01L21/335 ,  H01L29/76 ,  H01L29/78 ,  H01L21/28

CPC分类号： H01L29/66416 ,  H01L21/32 ,  H01L21/76897 ,  H01L27/085 ,  H01L29/7722 ,  H01L29/7725

公开(公告)号：EP0545238A3

公开(公告)日：1995-04-19

申请号：EP92120034.1

申请日：1992-11-25

申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  Nishizawa, Jun-ichi ,  ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI

发明人： Nishizawa, Jun-ichi ,  Kurabayashi, Toru, Matsuya Minamiyagiyama 203

IPC分类号： H01L21/20 ,  G01B11/06 ,  C30B25/16 ,  C30B23/02 ,  C30B25/14 ,  C30B25/10 ,  C23C16/52

CPC分类号： C30B25/105 ,  C30B23/002 ,  C30B23/02 ,  C30B29/42

摘要： Material and impurity gases are introduced into a crystal growth chamber (32) to grow a crystal film on a GaAs substrate (10). A light beam emitted from a variable-wavelength light source (35) is applied to the crystal film being grown on the substrate (10) while varying the wavelength of the light beam. The dependency, on the wavelength of the light beam, of the intensity of light reflected by the crystal film is measured, and an optimum wavelength is selected for measurement depending on the type of molecules adsorbed while the crystal film is being grown. Light is then applied at the optimum wavelength to the crystal film being grown, and a time-dependent change in the intensity of light reflected by the crystal film is measured. The rate at which the material gases are introduced into the crystal growth chamber (32) is adjusted to control the growth rate of the crystal film, the composition ratio of a mixed crystal thereof, and the density of the impurity therein.

公开(公告)号：EP0546493A1

公开(公告)日：1993-06-16

申请号：EP92120875.7

申请日：1992-12-08

申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  Nishizawa, Jun-ichi ,  KAWATETSU MINING COMPANY, LTD.

发明人： Nishizawa, Jun-ichi ,  Yamamoto, Kenji

IPC分类号： H01L21/306 ,  H01L21/268

CPC分类号： H01L21/30621 ,  H01L21/2686

摘要： A semiconductor material to be etched is held in a reaction chamber at a predetermined temperature. A reactive etching gas such as a chlorine gas is introduced into the reaction chamber for a first period of time. Thereafter, the reaction chamber is evacuated for a second period of time, and ultraviolet radiation is applied to the semiconductor material for a third period of time within the second period of time for thereby etching the semiconductor material to a depth on the order of a molecular or atomic layer.

摘要翻译： 将要蚀刻的半导体材料在预定温度下保持在反应室中。 将反应性蚀刻气体如氯气在第一时间段内引入反应室。 此后，将反应室抽真空第二时间，并且在第二时间段内对半导体材料施加紫外线辐射第三时间，从而将半导体材料蚀刻到分子量级的深度 或原子层。

公开(公告)号：EP0690513B1

公开(公告)日：1999-05-06

申请号：EP95114168.8

申请日：1987-11-10

申请人： Research Development Corporation of Japan ,  NISHIZAWA, Jun-ichi ,  Takeda, Nobuo ,  Suzuki, Soubei

发明人： Nishizawa, Junichi ,  Takeda, Nobuo ,  Suzuki, Soubei

IPC分类号： H01L29/76 ,  H01L21/335

CPC分类号： H01L29/66416 ,  H01L21/32 ,  H01L21/76897 ,  H01L27/085 ,  H01L29/7722 ,  H01L29/7725

公开(公告)号：EP0547030B1

公开(公告)日：1999-02-24

申请号：EP93101675.2

申请日：1987-11-18

申请人： Research Development Corporation of Japan ,  NISHIZAWA, Jun-ichi ,  Takeda, Nobuo ,  Suzuki, Soubei

发明人： Nishizawa, Junichi ,  Takeda, Nobuo ,  Suzuki, Soubei

IPC分类号： H01L21/335 ,  H01L29/76

CPC分类号： H01L29/66416 ,  H01L21/32 ,  H01L21/76897 ,  H01L27/085 ,  H01L29/7722 ,  H01L29/7725

公开(公告)号：EP0117874A4

公开(公告)日：1987-01-20

申请号：EP83902825

申请日：1983-09-02

申请人： NISHIZAWA JUN-ICHI

发明人： NISHIZAWA JUN-ICHI

IPC分类号： H01L27/146 ,  H01L29/10 ,  H01L29/772 ,  H01L31/10 ,  H01L31/112 ,  H04N5/335

CPC分类号： H01L31/1126 ,  H01L29/1066 ,  H01L29/7722

摘要： Improvements on a field effect or static induction transistor type photoelectric converter having a plurality of gate regions for controlling a main current at both sides of a source region. The distance between the gate regions at each side of the source region and the source region are different, thereby isolating the functions of the gates in high performance.

公开(公告)号：EP0194946A2

公开(公告)日：1986-09-17

申请号：EP86400533.5

申请日：1986-03-13

申请人： Research Development Corporation of Japan ,  NISHIZAWA, Jun-ichi ,  MITSUBISHI ELECTRIC CORPORATION

发明人： Nishizawa, Jun-Ichi ,  Kondoh, Hisao

IPC分类号： H01L23/48 ,  H01L23/04 ,  H01L29/74

CPC分类号： H01L24/06 ,  H01L23/051 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L24/72 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/1066 ,  H01L29/7392 ,  H01L2224/04042 ,  H01L2224/06181 ,  H01L2224/48091 ,  H01L2224/4847 ,  H01L2224/4918 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/1301 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A pressurized contact type double gate static induction thyristor comprising a semiconductor body located in a casing and having cathode electrodes and a first gate electrode at one principal surface side thereof and anode electrodes and a second gate electrode at the other principal surface side thereof. A first thermal expansion stress buffer plate is located in the casing to be in contact with the cathode electrode, and a second thermal expansion stress buffer plate is located at the other principal surface side of the semiconductor body. This second plate is composed of at least two metal members electrically insulated from each other and integrally bonded by an insulating material, one of the two metal members being in contact with the anode electrode and the other metal member being in contact with the second gate electrode.

摘要翻译： 一种加压接触型双栅极静电感应晶闸管，包括位于壳体中并具有阴极电极和在其一个主表面侧的第一栅极电极的半导体本体和位于其另一主表面侧的阳极电极和第二栅极电极。 第一热膨胀应力缓冲板位于壳体内以与阴极接触，第二热膨胀应力缓冲板位于半导体本体的另一主表面侧。 该第二板由至少两个彼此电绝缘并由绝缘材料一体地结合的金属构件组成，两个金属构件中的一个与阳极电极接触，另一个金属构件与第二栅电极接触 。

公开(公告)号：EP0116652A4

公开(公告)日：1986-09-04

申请号：EP83902822

申请日：1983-08-31

申请人： NISHIZAWA JUN-ICHI

发明人： NISHIZAWA JUN-ICHI

IPC分类号： H01L31/10 ,  H01L31/0352 ,  H01L31/11

CPC分类号： H01L31/035281 ,  H01L31/1105 ,  Y02E10/50

摘要： In a phototransistor having an emitter, a collector and a base, the impurity density of the base regions (20, 21) is irregular, a minority of carriers produced by a light are stored in the base region (20) having a large impurity density, and the majority of carriers are stored in the base region (21), with a low impurity density, in such a way that they are easily removed. The two base regions are placed in such a manner that the voltages of the base regions of large and small impurity densities are coupled to each other. This phototransistor can operate at extremely high sensitivity and high speed.

摘要翻译： 在具有发射极，集电极和基极的光电晶体管中，基极区（20,21）的杂质密度不规则，由光产生的少数载流子存储在杂质密度大的基极区（20） 并且大部分载流子以低杂质密度存储在基极区域（21）中，使得它们易于被去除。 两个基极区域以这样的方式放置，即大小杂质密度的基极区域的电压彼此耦合。 该光电晶体管能够以极高的灵敏度和高速运行。

公开(公告)号：EP0431415A3

公开(公告)日：1993-10-06

申请号：EP90122371.9

申请日：1990-11-23

申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  Manada, Nobuaki ,  Kurabayashi, Toru ,  Nishizawa, Jun-ichi

发明人： Manada, Nobuaki ,  Ito, Junji ,  Kurabayashi, Toru ,  Nishizawa, Jun-ichi

IPC分类号： C30B25/02 ,  C30B25/10

CPC分类号： C23C16/45561 ,  C30B25/14 ,  C30B25/165

摘要： In a method of and an apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gasses are alternately introduced into a closed chamber of a crystal growing device to grow the crystal placed within the closed chamber. At growing of the crystal, a light from a light source is emitted to a crystal growing film of the crystal. Intensity of a light reflected from the crystal growing film and received by a photo detector is measured. Charge amounts of the respective raw-material gasses are controlled by a control system on the basis of a change in the reflected-light intensity, thereby controlling a growing rate of the growing film.

公开(公告)号：EP0545238A2

公开(公告)日：1993-06-09

申请号：EP92120034.1

申请日：1992-11-25

申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  Nishizawa, Jun-ichi ,  ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI

发明人： Nishizawa, Jun-ichi ,  Kurabayashi, Toru, Matsuya Minamiyagiyama 203

IPC分类号： H01L21/20 ,  G01B11/06 ,  C30B25/16 ,  C30B23/02 ,  C30B25/14 ,  C30B25/10 ,  C23C16/52

CPC分类号： C30B25/105 ,  C30B23/002 ,  C30B23/02 ,  C30B29/42

摘要： Material and impurity gases are introduced into a crystal growth chamber (32) to grow a crystal film on a GaAs substrate (10). A light beam emitted from a variable-wavelength light source (35) is applied to the crystal film being grown on the substrate (10) while varying the wavelength of the light beam. The dependency, on the wavelength of the light beam, of the intensity of light reflected by the crystal film is measured, and an optimum wavelength is selected for measurement depending on the type of molecules adsorbed while the crystal film is being grown. Light is then applied at the optimum wavelength to the crystal film being grown, and a time-dependent change in the intensity of light reflected by the crystal film is measured. The rate at which the material gases are introduced into the crystal growth chamber (32) is adjusted to control the growth rate of the crystal film, the composition ratio of a mixed crystal thereof, and the density of the impurity therein.

摘要翻译： 将材料和杂质气体引入晶体生长室中以在GaAs衬底上生长晶体膜。 将从可变波长光源发射的光束施加到在衬底上生长的晶体膜，同时改变光束的波长。 测量由晶体膜反射的光的强度对光束的波长的依赖性，并且根据晶体膜生长时吸附的分子的种类，选择最佳的波长进行测定。 然后将光以最佳波长施加到正在生长的晶体膜上，并且测量由晶体膜反射的光的强度的时间依赖性变化。 调节将材料气体引入晶体生长室的速率，以控制晶体膜的生长速率，其混晶的组成比和其中的杂质密度。