公开(公告)号：EP0609886B1

公开(公告)日：1997-08-20

申请号：EP94101665.1

申请日：1994-02-03

申请人： RIKAGAKU KENKYUSHO

发明人： Kumagai, Hiroshi ,  Toyoda, Kouichi

IPC分类号： C30B25/02 ,  C30B23/02 ,  C30B29/16 ,  C30B29/18

CPC分类号： C30B25/02 ,  C23C16/45523 ,  C30B29/16 ,  C30B29/18 ,  C30B29/28 ,  Y10S117/904

摘要： The present invention has been achieved by perceiving the fact to the effect that a semiconductor production process-like manner such as CVD method or the like by which materials and film thickness can be controlled in an atomic scale may be utilized in case of preparing thin-film crystal, and employing such semiconductor production process-like manner being quite different from conventional technique. The invention relates to preparation of crystalline thin-films for solid-state lasers wherein a substrate contained in a vessel under a high vacuum condition is heated, materials for forming the laser material are supplied onto the surface of the aforesaid substrate in the form of gas, ion, single metal or metal compound to grow crystal on the surface of the aforesaid substrate, and a material of active ionic species is supplied onto the surface of the aforesaid substrate simultaneously with supply of the aforesaid materials for forming the laser host crystal, thereby controlling valence number of the material of active ionic species so as to be identical with the valence number of the metal ion constituting the crystal of the aforesaid laser host crystal.

公开(公告)号：EP0609886A1

公开(公告)日：1994-08-10

申请号：EP94101665.1

申请日：1994-02-03

申请人： RIKAGAKU KENKYUSHO

发明人： Kumagai, Hiroshi ,  Toyoda, Kouichi

IPC分类号： C30B25/02 ,  C30B23/02 ,  C30B29/16 ,  C30B29/18

CPC分类号： C30B25/02 ,  C23C16/45523 ,  C30B29/16 ,  C30B29/18 ,  C30B29/28 ,  Y10S117/904

摘要： The present invention has been achieved by perceiving the fact to the effect that a semiconductor production process-like manner such as CVD method or the like by which materials and film thickness can be controlled in an atomic scale may be utilized in case of preparing thin-film crystal, and employing such semiconductor production process-like manner being quite different from conventional technique. The invention relates to preparation of crystalline thin-films for solid-state lasers wherein a substrate contained in a vessel under a high vacuum condition is heated, materials for forming the laser material are supplied onto the surface of the aforesaid substrate in the form of gas, ion, single metal or metal compound to grow crystal on the surface of the aforesaid substrate, and a material of active ionic species is supplied onto the surface of the aforesaid substrate simultaneously with supply of the aforesaid materials for forming the laser host crystal, thereby controlling valence number of the material of active ionic species so as to be identical with the valence number of the metal ion constituting the crystal of the aforesaid laser host crystal.

摘要翻译： 本发明已经实现了通过感知的事实的效果没半导体制造工序状方式：如CVD法或通过其的材料和膜厚度可以在原子尺度被控制在可用于制备薄壁的情况下，可以利用等 薄膜晶体，并寻求用人半导体生产过程状的方式不同于传统的技术完全不同。 本发明涉及制备worin包含在容器中的基片的高真空条件下被加热时，用于形成激光材料的材料中的气体的形式供给到上述基板的表面的晶体薄膜为固态激光器的 ，离子，单一金属或金属化合物与上述基板的表面上生长晶体，以及激活离子的材料被供给到上述基板的表面的同时形成激光器主晶的上述材料的供应，从而 控制激活离子材料的价数，以便与构成上述激光器主晶的晶体的金属离子的价数一致。