Electro-optical modulator based on carrier depletion or carrier accumulation in semiconductors with advanced electrode configuration
    1.
    发明公开
    Electro-optical modulator based on carrier depletion or carrier accumulation in semiconductors with advanced electrode configuration 有权
    基于Trägerabreicherung或载流子积累在具有改进的电极结构的半导体电光调制器

    公开(公告)号:EP2775343A2

    公开(公告)日:2014-09-10

    申请号:EP14157000.2

    申请日:2014-02-27

    Abstract: An electro-optical modulator (1) is proposed to have two electrodes (33, 35) being part of a transmission line (19) of a first phase modulator and further two electrodes (37, 39) being part of a transmission line (19) of a second phase modulator included in two arm of a Mach-Zehnder-interferometer. Each transmission line (19) comprises a pn-diode (41, 43) or a semiconductor-isolator-semiconductor capacitor. Furthermore, an electrical controller (17) is adapted for applying first electrical high-frequency-modulated voltage signals Sig1(t) between the first and second electrodes (33, 35) and for applying second electrical high-frequency-modulated signals Sig2(t) between the fourth and third electrodes (39, 37). However, a DC component of these signals Sig1(t) and Sig2(t) and a polarity with which these signals are applied to the first and second diodes (41, 43) or to the first and second semiconductor-insulator-semiconductor capacitor principally differ in comparison to conventional approaches in that the electrical controller (17) shall apply signals such that voltages applied to the first and fourth electrodes (33, 39) have substantially a same high-frequency content, and the voltages applied to the second and third electrodes (35, 37) have substantially the same high-frequency content. In such configuration, either the voltages applied to the first and fourth electrodes (33, 39) differ by a constant voltage offset, or, alternatively, the voltages applied to the second and third electrodes (35, 37) differ by a constant voltage offset. Thereby, cross-talk between electrodes and electrical losses as well as device size and fabrication costs may be reduced.

    Abstract translation: 电光调制器(1),提出了具有两个电极(33,35)是第一相位调制器的一个传输线(19)的一部分,并且进一步在两个电极(37,39)是传输线的部分(19 )包括在两个臂部的Mach-Zehnder干涉仪的第二相位调制器的。 每个传输线(19)包括一个pn二极管(41,43)或半导体 - 绝缘体 - 半导体电容器。 进一步,以电控制器(17)被angepasst用于第一和第二电极(33,35)之间施加第一电高频调制的电压信号SIG1(t)和用于施加第二电高频调制的信号Sig2(吨 )第四和第三电极之间(39,37)。 然而,DC分量合成信号SIG1(t)和SIG2(t)和与合成信号的极性被施加到第一和第二二极管(41,43)或第一和第二半导体 - 绝缘体 - 半导体电容器主要地 相比于在没有所述电控制器(17)的常规方法鉴别适用信号搜索没有电压施加到第一和第四电极(33,39)具有基本相同的高频含量,所述电压施加到第二和第三 电极(35,37)具有基本相同的高频内容。 在寻求结构中,无论是施加于第一和第四电极上的电压(33,39)通过一个恒定的电压差的偏移,或者,可替换地,电压施加到第二和第三电极(35,37)通过一个恒定的电压差的偏移 , 从而,电极和电损耗,以及设备的尺寸和制造成本之间的串扰可以被降低。

    Electro-optical modulator based on carrier depletion or carrier accumulation in semiconductors with advanced electrode configuration
    2.
    发明公开
    Electro-optical modulator based on carrier depletion or carrier accumulation in semiconductors with advanced electrode configuration 有权
    基于Trägerabreicherung或载流子积累在具有改进的电极结构的半导体电光调制器

    公开(公告)号:EP2775343A3

    公开(公告)日:2016-02-24

    申请号:EP14157000.2

    申请日:2014-02-27

    Abstract: An electro-optical modulator (1) is proposed to have two electrodes (33, 35) being part of a transmission line (19) of a first phase modulator and further two electrodes (37, 39) being part of a transmission line (19) of a second phase modulator included in two arm of a Mach-Zehnder-interferometer. Each transmission line (19) comprises a pn-diode (41, 43) or a semiconductor-isolator-semiconductor capacitor. Furthermore, an electrical controller (17) is adapted for applying first electrical high-frequency-modulated voltage signals Sig1(t) between the first and second electrodes (33, 35) and for applying second electrical high-frequency-modulated signals Sig2(t) between the fourth and third electrodes (39, 37). However, a DC component of these signals Sig1(t) and Sig2(t) and a polarity with which these signals are applied to the first and second diodes (41, 43) or to the first and second semiconductor-insulator-semiconductor capacitor principally differ in comparison to conventional approaches in that the electrical controller (17) shall apply signals such that voltages applied to the first and fourth electrodes (33, 39) have substantially a same high-frequency content, and the voltages applied to the second and third electrodes (35, 37) have substantially the same high-frequency content. In such configuration, either the voltages applied to the first and fourth electrodes (33, 39) differ by a constant voltage offset, or, alternatively, the voltages applied to the second and third electrodes (35, 37) differ by a constant voltage offset. Thereby, cross-talk between electrodes and electrical losses as well as device size and fabrication costs may be reduced.

    Electro-optical modulator based on carrier depletion or carrier accumulation in semiconductors with advanced electrode configuration
    3.
    发明授权
    Electro-optical modulator based on carrier depletion or carrier accumulation in semiconductors with advanced electrode configuration 有权
    基于载流子耗尽或载流子积累的半导体电光调制器,具有先进的电极配置

    公开(公告)号:EP2775343B1

    公开(公告)日:2018-04-11

    申请号:EP14157000.2

    申请日:2014-02-27

    Abstract: An electro-optical modulator (1) is proposed to have two electrodes (33, 35) being part of a transmission line (19) of a first phase modulator and further two electrodes (37, 39) being part of a transmission line (19) of a second phase modulator included in two arm of a Mach-Zehnder-interferometer. Each transmission line (19) comprises a pn-diode (41, 43) or a semiconductor-isolator-semiconductor capacitor. Furthermore, an electrical controller (17) is adapted for applying first electrical high-frequency-modulated voltage signals Sig1(t) between the first and second electrodes (33, 35) and for applying second electrical high-frequency-modulated signals Sig2(t) between the fourth and third electrodes (39, 37). However, a DC component of these signals Sig1(t) and Sig2(t) and a polarity with which these signals are applied to the first and second diodes (41, 43) or to the first and second semiconductor-insulator-semiconductor capacitor principally differ in comparison to conventional approaches in that the electrical controller (17) shall apply signals such that voltages applied to the first and fourth electrodes (33, 39) have substantially a same high-frequency content, and the voltages applied to the second and third electrodes (35, 37) have substantially the same high-frequency content. In such configuration, either the voltages applied to the first and fourth electrodes (33, 39) differ by a constant voltage offset, or, alternatively, the voltages applied to the second and third electrodes (35, 37) differ by a constant voltage offset. Thereby, cross-talk between electrodes and electrical losses as well as device size and fabrication costs may be reduced.

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