摘要:
The invention concerns a process for preparing particles of a chalcogenide compound comprising at least one rare earth element, wherein : - a mixture comprising precursor materials of the chalcogenide compound is introduced in a plasma; - the mixture is transported with the help of a gas carrier in the plasma and is transformed into the particles of the chalcogenide compound; - the particles of the chalcogenide compound are recovered.
摘要:
The present invention relates to the use as a pseudocapacitive electrode material for supercapacitors, of a metal oxide of formula
A 1-x A' x Co 1-y B y O 3 ,
Where 0≤x said metal oxide presents a perovskite crystal structure, A represents a rare earth metal, A' represents an alkaline earth metal, B represents a transition metal, and A, A' and B may be mixtures of metals, wherein said material is implemented on an electrode comprising a carbonaceous material and said material is loaded on said carbonaceous material with a loading mass greater than 5 mg/cm 2 . The present invention further relates to pseudocapacitive electrodes for supercapacitors, wherein the material of said pseudocapactive electrode comprises a pseudocapacitive electrode material as defined above, to a supercapacitor comprising at least said pseudocapacitive electrode. Lastly, the present invention relates to the use of a pseudocapacitive electrode as defined above for manufacturing a supercapacitor.
摘要翻译:本发明涉及用作超级电容器的赝电容性电极材料的式A1-xA'xCo1-yByO3的金属氧化物的用途,其中0≤x<1,0≤y<0.5,所述金属氧化物呈现钙钛矿晶体结构 A代表稀土金属,A'代表碱土金属,B代表过渡金属,A,A'和B可以是金属的混合物,其中所述材料在包含碳质材料的电极上实施,并且所述材料 以大于5mg / cm 2的加载质量加载在所述碳质材料上。 本发明进一步涉及用于超级电容器的伪电容性电极,其中所述伪性电极的材料包括如上所定义的赝电容性电极材料,包括至少包含所述赝电容性电极的超级电容器。 最后,本发明涉及如上定义的赝电容电极用于制造超级电容器的用途。
摘要:
The invention relates to a material comprising at least one compound having formula Bi 1-x M x Ag 1-y-ε M' y OS 1-z M" z , the methods for producing said material and the use thereof as a semiconductor, such as for photovoltaic or photochemical use and, in particular, for supplying a photocurrent. The invention further relates to photovoltaic devices using said compounds.
摘要:
The invention relates to a material comprising at least one compound having formula Bi 1-x M x Cu 1-y-ɛ M' y OS 1-z M" z , the methods for producing said material and the use thereof as a semiconductor, such as for photovoltaic or photochemical use and, in particular, for supplying a photocurrent. The invention further relates to photovoltaic devices using said compounds.