公开(公告)号：EP3832737B1

公开(公告)日：2024-09-04

申请号：EP21150107.7

申请日：2012-07-02

IPC: H01L31/0224 ,  H01L31/072 ,  H01L31/0747

CPC classification number: H01L31/022425 ,  H01L31/072 ,  H01L31/0747 ,  Y02E10/50 ,  H01L31/02168

公开(公告)号：EP3335245A1

公开(公告)日：2018-06-20

申请号：EP15901226.9

申请日：2015-08-14

Applicant: Henkel AG & Co. KGaA

Inventor： ZHANG, Chao ,  WU, Qili ,  HENCKENS, Anja ,  OLDENZIJL, Rudolf Warmold ,  THEUNISSEN, Liesbeth ,  DREEZEN, Gunther ,  VAN REMOORTERE, Bart ,  YANG, Jing

IPC: H01L31/0224

CPC classification number: H01L31/022466 ,  H01B1/22 ,  H01L31/0201 ,  H01L31/022425 ,  H01L31/072 ,  H01L31/1884 ,  Y02E10/50

Abstract: The present invention relates to a conductive paste composition for solar photovoltaic cells comprising metal particles dispersed in a suitable carrier therefor, wherein said carrier comprises a solvent and a resin, and wherein at least a portion of said metal particles are characterized by having a ψ value, as defined by X-ray diffraction

公开(公告)号：EP3265850A1

公开(公告)日：2018-01-10

申请号：EP16720042.7

申请日：2016-03-07

Applicant: Neutrino Deutschland GmbH

Inventor： SCHUBART, Holger Thorsten

IPC: G01T1/00

CPC classification number: H01M4/661 ,  G01T1/00 ,  H01L21/02425 ,  H01L21/02444 ,  H01L21/0245 ,  H01L21/02507 ,  H01L21/02527 ,  H01L21/02532 ,  H01L31/028 ,  H01L31/072 ,  H01L31/115 ,  H01M4/0423 ,  H01M4/134 ,  H01M4/366 ,  H01M4/386 ,  H01M4/583 ,  Y02E10/547

Abstract: The invention relates to a film made of metal or a metal alloy, in particular a film made of aluminum or an aluminum alloy, a so-called neutrino or ntrino film (registered trademarks), to a method of production and to a use of a film made of metal or a metal alloy.

公开(公告)号：EP2201611A4

公开(公告)日：2017-10-25

申请号：EP08833954

申请日：2008-09-24

Applicant: FIRST SOLAR INC

Inventor： EAGLESHAM DAVID

IPC: H01L31/072

CPC classification number: H01L31/0336 ,  H01L31/072 ,  H01L31/1828 ,  H01L31/184 ,  Y02E10/543 ,  Y02E10/544 ,  Y02P70/521

公开(公告)号：EP3154919A1

公开(公告)日：2017-04-19

申请号：EP15727958.9

申请日：2015-06-05

Applicant: Lafarge

Inventor： DUBOIS-BRUGGER, Isabelle ,  HORGNIES, Matthieu

IPC: C04B41/52 ,  C04B41/71 ,  H02S20/26 ,  H01L31/0392 ,  C04B41/45 ,  C23C14/00 ,  C23C14/06 ,  C23C14/20 ,  H01L31/0236 ,  C04B111/00

CPC classification number: H02S20/26 ,  C04B41/009 ,  C04B41/4888 ,  C04B41/5111 ,  C04B41/5138 ,  C04B41/52 ,  C04B41/71 ,  C04B2111/00844 ,  C23C14/024 ,  C23C14/025 ,  C23C14/0623 ,  C23C14/0629 ,  C23C14/24 ,  C23C14/243 ,  H01L31/0326 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/18 ,  Y02B10/10 ,  Y02E10/50 ,  C04B28/02 ,  C04B41/0045 ,  C04B41/483 ,  C04B41/4529 ,  C04B41/5133 ,  C04B41/5116 ,  C04B41/522 ,  C04B41/5014

Abstract: The invention relates to concrete with a smooth surface, coated completely or partially with a polymer film obtained by means of radiation-induced polymerisation, said film in turn being coated completely or partially with a thin photovoltaic film.

Abstract translation: 具有光滑表面的混凝土，其全部或部分涂覆有在辐射作用下通过聚合获得的聚合物膜，其中膜本身全部或部分地涂覆有薄的光伏膜。

公开(公告)号：EP2992556A4

公开(公告)日：2016-12-21

申请号：EP14791065

申请日：2014-05-02

Applicant: FIRST SOLAR INC

Inventor： BLAYDES HOLLY ANN ,  ANDREINI KRISTIAN WILLIAM ,  HUBER WILLIAM HULLINGER ,  HINNERS EUGENE THOMAS ,  SHIANG JOSEPH JOHN ,  LIANG YONG ,  CHOI JONGWOO

IPC: H01L27/098 ,  H01L21/02 ,  H01L27/14 ,  H01L27/142 ,  H01L31/0224 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/065 ,  H01L31/068 ,  H01L31/072 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/0272 ,  C23C14/0629 ,  H01L21/02422 ,  H01L21/02477 ,  H01L21/0248 ,  H01L21/02483 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0256 ,  H01L21/02562 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/072 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1836 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

Abstract translation: 介绍了光伏器件。 光伏器件包括层叠; 并且在层叠体上设置吸收层。 吸收层包括硒，其中硒的原子浓度在吸收层的厚度上变化。 光电器件基本上不含硫化镉层。

公开(公告)号：EP3087615A1

公开(公告)日：2016-11-02

申请号：EP14874607.6

申请日：2014-12-23

Applicant: Bengbu Design & Research Institute for Glass Industry

Inventor： PALM, Jorg ,  POHLNER, Stephan ,  HAPP, Thomas ,  DALIBOR, Thomas ,  DIETMUELLER, Roland ,  VERMA, Rajneesh

IPC: H01L31/04 ,  H01L31/18

CPC classification number: H01L31/0336 ,  H01L31/0324 ,  H01L31/0352 ,  H01L31/072 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A layer system (1) for thin-film solar cells (100), comprising an absorber layer (4), which contains a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4), wherein the buffer layer (5) has a semiconductor material of the formula AxInySz, where A is potassium (K) and/or cesium (Cs), with 0.015≦x/(x+y+z)≦0.25 and 0.30≦y/(y+z)≦0.45.

Abstract translation: 一种用于薄膜太阳能电池（100）的层系统（1），其包括含有硫族化合物半导体的吸收层（4）和设置在吸收层（4）上的缓冲层（5） 其中所述缓冲层（5）具有式AxInySz的半导体材料，其中A是钾（K）和/或铯（Cs），其中0.015≤x/（x + y + z）≤0.25和0.30≤y/ （Y + Z）≦0.45。

公开(公告)号：EP2865016A4

公开(公告)日：2016-04-27

申请号：EP13806347

申请日：2013-06-21

Applicant: EPIWORKS INC

Inventor： AHMARI DAVID ,  LIM SWEE ,  RAI SHIVA ,  FORBES DAVID

IPC: H01L31/0725 ,  H01L31/042 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/0336 ,  H01L31/065 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/076 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields and lower costs. Certain solar cells may further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Abstract translation: 公开了多结太阳能电池的制造及其装置。 该结构还适用于提供更均匀且一致的太阳能电池结构的制造，从而提高产量并降低成本。 一些太阳能电池还可以包括一个或多个半导体层中的一个或多个半导体元件的一个或多个组成梯度，从而产生更优化的太阳能电池器件。

公开(公告)号：EP2996163A3

公开(公告)日：2016-04-06

申请号：EP15180951.4

申请日：2009-10-24

Applicant: Intellectual Keystone Technology LLC

Inventor： OH, Min-Seok ,  KIM, Jung-Tae ,  SONG, Nam-Kyu ,  PARK, Min ,  LEE, Yun-Seok ,  LEE, Czang-Ho ,  SHIN, Myung-Hun ,  LEE, Byoung-Kyu ,  NAM, Yuk-Hyun ,  JUNG, Seung-Jae ,  LIM, Mi-Hwa ,  SEO, Joon-Young ,  CHOI, Dong ,  KIM, Dong-Seop ,  KIM, Byoung-June

IPC: H01L31/072 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/075 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0236

CPC classification number: H01L31/022441 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/078 ,  H01L31/182 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548

Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer; and
a trench between the first conductive layer and the second conductive layer, wherein a portion of the first non-single crystalline semiconductor layer is exposed by the trench.

Abstract translation: 本发明公开了一种具有包括正面和背面的半导体衬底（10）的光电转换装置，形成在半导体衬底（10）的前侧上的保护层（60），第一非单晶半导体层 20），形成在所述第一非单晶半导体层（20）的背侧的第一部分上的包括第一杂质的第一导电层（30）和第二导电层 （31），其包括形成在第一非单晶半导体层（20）的背面的第二部分上的第一杂质和第二杂质。

公开(公告)号：EP3001439A1

公开(公告)日：2016-03-30

申请号：EP15193301.7

申请日：2013-07-18

Applicant: Asahi Kasei Kabushiki Kaisha ,  Tohoku University

Inventor： WATANABE, Akira ,  YUMOTO, Toru

IPC: H01G9/20 ,  H01L31/032 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/074 ,  H01L31/0749 ,  H01L31/18

CPC classification number: H01L31/0264 ,  H01L31/022425 ,  H01L31/032 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/072 ,  H01L31/074 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/541 ,  Y02E10/547 ,  Y02P70/521

Abstract: The present invention relates to an application liquid for forming a semiconductor film, the application liquid comprising: an inorganic semiconductor particle; and a compound having a relative permittivity of 2 or more or a compound having reducing power against the inorganic semiconductor particle; a method for producing a semiconductor film comprising a step of applying the application liquid; a semiconductor film and a semiconductor element comprising the semiconductor film; and a method for producing the semiconductor element.

Abstract translation: 本发明涉及一种用于形成半导体膜的涂布液，所述涂布液包括：无机半导体颗粒; 和相对介电常数为2以上的化合物或具有对无机半导体颗粒的还原力的化合物; 一种半导体膜的制造方法，其特征在于，包括施加上述涂布液的工序; 半导体膜和包含半导体膜的半导体元件; 以及半导体元件的制造方法。