公开(公告)号：EP2838120B1

公开(公告)日：2016-03-23

申请号：EP13180134.2

申请日：2013-08-12

申请人： Rigas Tehniska Universitate

发明人： Medvids, Arturs ,  Onufrijevs, Pavels ,  Dauksta, Edvins ,  Mezinskis, Gundars

IPC分类号： H01L31/028 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/103 ,  H01L31/18 ,  H01L21/20

CPC分类号： H01L31/028 ,  H01L21/268 ,  H01L21/3247 ,  H01L31/035209 ,  H01L31/065 ,  H01L31/068 ,  H01L31/103 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2879190A1

公开(公告)日：2015-06-03

申请号：EP13195011.5

申请日：2013-11-29

申请人： Rigas Tehniska Universitate

发明人： Medvids, Arturs ,  Onufrijevs, Pavels

IPC分类号： H01L31/0296 ,  H01L31/068 ,  H01L31/18 ,  H01L31/103

CPC分类号： H01L31/068 ,  H01L31/02963 ,  H01L31/1032 ,  H01L31/1828 ,  Y02E10/543 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to technical physics and can be used in the production of light-absorbing and light-emitting semiconductor devices. The technical problem to be solved by the present invention is to simplify a method for formation of a shallow graded band gap p-n homojunction in cadmium telluride. In a method for formation of a graded band gap p-n homojunction in cadmium telluride, according to the present invention, the surface of the p-type electrical conductivity cadmium telluride single crystal is coated with a layer of silicon dioxide with thickness no more than 100 nm and then the surface of the p-type electrical conductivity cadmium telluride single crystal is irradiated by laser radiation with an absorption coefficient in cadmium telluride no less than 5.9·10 5 cm -1 , the laser radiation doses being in the range from 1 to 15 mJ/cm 2 , and the pulse duration being in the interval from 1 to 10 ns, to form the graded band gap p-n homojunction with the thickness of the n-type layer equal to or less than 17 nm on the surface layer of the cadmium telluride single crystal.

摘要翻译： 本发明涉及技术物理学，可用于制造光吸收和发光半导体器件。 本发明要解决的技术问题是简化在碲化镉中形成浅梯度带隙p-n同型结的方法。 在根据本发明的用于形成碲化镉中的渐变带隙pn同功的方法中，p型导电性碲化镉单晶的表面涂覆有厚度不超过100nm的二氧化硅层 然后通过激光辐射照射p型导电性碲化镉单晶的表面，碲化镉吸收系数不小于5.9×10 5 cm -1，激光辐射剂量范围为1〜15 mJ / cm 2，脉冲持续时间为1〜10ns的间隔，以形成与镉的表面层等于或小于17nm的n型层的厚度的分级带隙pn同结 碲化物单晶。

公开(公告)号：EP2838120A1

公开(公告)日：2015-02-18

申请号：EP13180134.2

申请日：2013-08-12

申请人： Rigas Tehniska Universitate

发明人： Medvids, Arturs ,  Onufrijevs, Pavels ,  Dauksta, Edvins ,  Mezinski, Gundars

IPC分类号： H01L31/028 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/103 ,  H01L31/18 ,  H01L21/20

CPC分类号： H01L31/028 ,  H01L21/268 ,  H01L21/3247 ,  H01L31/035209 ,  H01L31/065 ,  H01L31/068 ,  H01L31/103 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to technical physics and can be used in the production of light-absorbing and light-emitting semiconductor devices. The technical problem solved by the present invention is to develop a simple method for formation of a graded band gap p-n homojunction in silicon, which effectively absorbs and emits light in a broad spectral range, including visible light. The method for formation of a graded band gap p-n homojunction in silicon comprises a step of formation of a p-n junction in a p-type conductivity silicon monocrystal having a resistivity of 1 to 10 Ω•cm, surface roughness of the monocrystal being less than 1.6 nm, by irradiating its surface with a laser radiation with an absorption coefficient in silicon no less than 10 6 cm -1 , the laser radiation doses being between 30 and 750 mJ/cm 2 , and the length of the pulses being between 1 and 10 ns, to form a graded band gap p-n homojunction with a thickness of the n-type layer equal to or less than 26 nm on the surface layer of the silicon monocrystal.

摘要翻译： 本发明涉及技术物理学，可用于制造光吸收和发光半导体器件。 本发明解决的技术问题是开发一种在硅中形成渐变带隙p-n同质结的简单方法，其有效地吸收并发射包括可见光在内的宽光谱范围内的光。 在硅中形成渐变带隙pn同质结的方法包括在p型导电性硅单晶中形成pn结的步骤，其电阻率为1至10欧姆，单晶的表面粗糙度小于 1.6nm，通过用硅中吸收系数不小于10 6 cm -1的激光辐射照射其表面，激光辐射剂量在30和750mJ / cm 2之间，脉冲的长度在1和 10ns，以在硅单晶的表面层上形成等于或小于26nm的n型层的厚度的渐变带隙pn同结。