公开(公告)号：EP2109883A1

公开(公告)日：2009-10-21

申请号：EP07734269.9

申请日：2007-02-08

申请人： S.O.I. TEC Silicon on Insulator Technologies

发明人： KONONCHUK, Oleg ,  LETERTRE, Fabrice ,  LANGER, Robert

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： The invention relates to a method for fabricating a composite structure having heat dissipation properties greater than a bulk single crystal silicon structure having the same dimensions, the structure comprising a support substrate, a top layer and an oxide layer between the support substrate and the top layer, the method comprising the steps of: a) providing a top layer made of a crystalline material, b) bonding the top layer with a support substrate made of a polycrystalline material having high heat dissipation properties, such that an oxide layer is formed at the bonding interface, in order to obtain said structure, characterized in that it further comprises a heat treatment of the structure in an inert or reducing atmosphere at a predetermined temperature and a predetermined duration to increase the heat dissipation properties by dissolving at least a part of the oxide layer.

公开(公告)号：EP1661175A1

公开(公告)日：2006-05-31

申请号：EP04787275.9

申请日：2004-09-01

申请人： S.O.I. Tec Silicon on Insulator Technologies ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： KERDILES, Sébastien ,  LETERTRE, Fabrice ,  MORICEAU, Hubert ,  MORALES, Christophe

IPC分类号： H01L21/762

CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L21/76259 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a method for producing a thin layer (104) on a final substrate (107) consisting in forming said semiconductor layer on an initial carrier (101), assembling said thin layer (104) and the final substrate (107) by metallic bonding, and in mechanically separating the initial carrier and the thin layer (107), thereby obtaining an intermediate substrate usable for producing different components such as electroluminescent diodes or laser diodes. The inventive method makes it possible to produce a thin layer on a final substrate from an initial substrate which is recyclable by non-destructive mechanical dismounting.

公开(公告)号：EP1644967A2

公开(公告)日：2006-04-12

申请号：EP04740898.4

申请日：2004-07-08

申请人： S.O.I. Tec Silicon on Insulator Technologies

发明人： LETERTRE, Fabrice ,  GHYSELEN, Bruno ,  RAYSSAC, Olivier

IPC分类号： H01L21/20

CPC分类号： H01L21/2007 ,  H01L21/76251 ,  H01L21/76254

摘要： The invention concerns a structure assembled from a film and a substrate (85, 82) respectively having a first thermal expansion coefficient and a second thermal expansion coefficient which differs from the first, and respectively having first and second assembly faces, motifs being formed in the second substrate (82), said motifs being elastic or being flexible in a plane parallel to the first and second assembly faces.

公开(公告)号：EP1523771B1

公开(公告)日：2010-03-10

申请号：EP03750808.2

申请日：2003-07-15

申请人： S.O.I. Tec Silicon on Insulator Technologies S.A. ,  Soitec

发明人： DI CIOCCIO, Léa ,  LETERTRE, Fabrice ,  HUGONNARD-BRUYERE, Elsa

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/7602

公开(公告)号：EP1523771A2

公开(公告)日：2005-04-20

申请号：EP03750808.2

申请日：2003-07-15

申请人： S.O.I. Tec Silicon on Insulator Technologies S.A. ,  Soitec

发明人： DI CIOCCIO, Léa ,  LETERTRE, Fabrice ,  HUGONNARD-BRUYERE, Elsa

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/7602

摘要： The invention concerns a method for transferring an electrically active thin layer from an initial substrate onto a target substrate, comprising the following steps: ion implantation through one surface of the initial substrate to produce an embrittled embedded layer at a specific depth relative to the implanted surface of the initial substrate, a thin layer being thereby delimited between the implanted surface and the embedded layer; securing the implanted side of the initial substrate on a surface of the target substrate; separating the thin layer from the rest of the initial substrate at the embedded layer; thinning down the thin layer transferred onto the target substrate. The dose, energy and current of the implantation are selected, during the ion implantation step, such that the defect concentration of the implantation is less than a specific threshold which results in obtaining in the thin layer the desired electrical properties for the thin layer.