公开(公告)号：EP2109583A1

公开(公告)日：2009-10-21

申请号：EP08702248.9

申请日：2008-01-10

申请人： S.O.I.TEC Silicon on Insulator Technologies S.A.

发明人： ASPAR, Bernard ,  LAGAHE BLANCHARD, Chrystelle ,  SOUSBIE, Nicolas

IPC分类号： B81C1/00

CPC分类号： B81C1/00952 ,  B81B3/001 ,  B81C2201/115

摘要： The invention relates to a process of forming a rough interface (12) in a semiconductor substrate (2), comprising: the formation, on a surface (4) of said substrate, of a zone of irregularities (8) in or on an oxide or a material (6) that may be oxidized, the formation of roughnesses in or on the semiconductor substrate (2) by thermal oxidation of or through this material or this oxide (6) and a part of the semiconductor substrate.

公开(公告)号：EP2109582A1

公开(公告)日：2009-10-21

申请号：EP08702243.0

申请日：2008-01-10

申请人： S.O.I.TEC Silicon on Insulator Technologies S.A.

发明人： ASPAR, Bernard ,  LAGAHE BLANCHARD, Chrystelle ,  SOUSBIE, Nicolas

IPC分类号： B81C1/00

CPC分类号： B81B3/001 ,  B81C1/00952 ,  B81C2201/115

摘要： The invention relates to a process for forming a semiconductor component with a buried rough interface comprising: a) the formation of a rough interface (22) of predetermined roughness R2 in a first semiconductor substrate (16), with: * the selection of a semiconductor substrate (16), presenting a surface (14) with roughness R1>R2, * a thermal oxidation step for this substrate until an oxide -semiconductor interface (22) of roughness R2 is obtained, b) preparation of the oxidized surface of this first semiconductor substrate in view of assembly with a second substrate, c) the assembly of the surface of the oxide and of the second substrate.