专利检索 ap:("S.O.I.TEC. Silicon on Insulator Technologies S.A.") AND inv:"SUCIU, Gabriela" 第 1 页

1.

发明公开
THIN LAYER TRANSFER METHOD WHEREIN A CO-IMPLANTATION STEP IS PERFORMED ACCORDING TO CONDITIONS AVOIDING BLISTERS FORMATION AND LIMITING ROUGHNESS 审中-公开
标题翻译：薄膜转移过程中，与COIMPLANTIERUNGSSCHRITT条件下，避免VOID和粗糙的限制执行

公开(公告)号：EP1792338A1

公开(公告)日：2007-06-06

申请号：EP04769600.0

申请日：2004-09-21

申请人： S.O.I.TEC. Silicon on Insulator Technologies S.A.

发明人： NGUYEN, Nguyet, Phuong , BEN MOHAMED, Nadia , BOUSSAGOL, Alice , AKATSU, Takeshi , SUCIU, Gabriela

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 , H01L21/26506

摘要： The invention proposes a method for transferring a thin layer wherein a co-implantation step of two different species is performed. The implantation energies of said first and second species are selected such that said second species peak is located in the thickness of the donor substrate within said embrittlement zone and more in-depth than said first species spreading zone, and the implantation doses of said first and second species are selected to be substantially similar, the first species implantation dose counting from 40% to 60% of the total implantation dose.