公开(公告)号：EP1644969A1

公开(公告)日：2006-04-12

申请号：EP04767657.2

申请日：2004-07-12

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： GHYSELEN, Bruno ,  AKATSU, Takeshi ,  FONTANIERE, Richard

IPC分类号： H01L21/265 ,  H01L21/762

CPC分类号： H01L21/26506 ,  H01L21/76254

摘要： The invention relates to a method for implantation in a wafer comprising at least one layer having an irregular surface, whereby the implantation is performed through said irregular surface. The invention is characterised in that a coating step is performed prior to the implantation step, consisting in coating the irregular surface with a coating layer in order to increase the uniformity of the implantation depth.

公开(公告)号：EP1644969B1

公开(公告)日：2010-05-12

申请号：EP04767657.2

申请日：2004-07-12

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： GHYSELEN, Bruno ,  AKATSU, Takeshi ,  FONTANIERE, Richard

IPC分类号： H01L21/265 ,  H01L21/762

CPC分类号： H01L21/26506 ,  H01L21/76254