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公开(公告)号：EP1208593B1
公开(公告)日：2011-02-16
申请号：EP00958697.5
申请日：2000-08-17
发明人： BARGE, Thierry , GHYSELEN, Bruno , IWAMATSU, Toshiaki , NARUOKA, Hideki , FURIHATA, Junichiro , MITANI, Kiyoshi
IPC分类号： H01L21/762 , H01L21/306
CPC分类号： H01L21/306 , H01L21/30625 , H01L21/76254 , Y10T428/12528
摘要： The invention relates to a method for treating substrates (1) for microelectronics or opto-electronics, comprising a useful layer (6) which is at least partially composed of an oxidable material on at least one of the surfaces thereof. The inventive method consists of a first sacrificial oxidation phase whereby a certain thickness of the material making up the useful layer (6) can be removed from the surface of each substrate (1); a phase (200) in which the surface which underwent the first stage of sacrificial oxidation is polished; and a third sacrificial oxidation phase whereby material making up the useful layer (6) is removed once more from the polished surface (17).
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2.发明公开
公开(公告)号：EP1208593A1
公开(公告)日：2002-05-29
申请号：EP00958697.5
申请日：2000-08-17
发明人： BARGE, Thierry , GHYSELEN, Bruno , IWAMATSU, Toshiaki , NARUOKA, Hideki , FURIHATA, Junichiro , MITANI, Kiyoshi
IPC分类号： H01L21/762 , H01L21/306
CPC分类号： H01L21/306 , H01L21/30625 , H01L21/76254 , Y10T428/12528
摘要： The invention relates to a method for treating substrates (1) for microelectronics or opto-electronics, comprising a useful layer (6) which is at least partially composed of an oxidable material on at least one of the surfaces thereof. The inventive method consists of a first sacrificial oxidation phase whereby a certain thickness of the material making up the useful layer (6) can be removed from the surface of each substrate (1); a phase (200) in which the surface which underwent the first stage of sacrificial oxidation is polished; and a third sacrificial oxidation phase whereby material making up the useful layer (6) is removed once more from the polished surface (17).
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