公开(公告)号：EP1949430A1

公开(公告)日：2008-07-30

申请号：EP06820227.4

申请日：2006-10-17

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： ALLIBERT, Frédéric ,  DEGUET, Chrystel ,  RICHTARCH, Claire

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： The invention concerns a method for treating a structure comprising a thin Ge layer on a substrate, said layer having been previously bonded to the substrate, the method including a treatment for improving the electrical properties of the layer and/or of the interface of the Ge layer with the underlying layer. The invention is characterized in that said treatment is a heat treatment implemented at a temperature ranging between 5000C and 6000C for a maximum of 3 hours. The invention also concerns a method for producing a structure comprising a Ge layer, the method including bonding a donor substrate comprising at least in its upper part a thin Ge layer and a receiver substrate, characterized in that it includes the following steps: (a) bonding the donor substrate to the receiver substrate such that the Ge layer is located in the neighborhood of the bonding interface; (b) eliminating part of the donor substrate not including the Ge layer; (c) treating the structure comprising the receiver substrate and the Ge layer in accordance with the treatment method.

公开(公告)号：EP1646478B9

公开(公告)日：2008-07-16

申请号：EP04767750.5

申请日：2004-07-22

申请人： S.O.I.TEC Silicon on Insulator Technologies S.A.

发明人： RICHTARCH, Claire

IPC分类号： B24B37/04 ,  H01L21/304

CPC分类号： B24B37/042 ,  H01L21/02024 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/1608 ,  Y10S438/931

摘要： The invention relates to a method for surface treatment of a wafer of semiconductor material for microelectronic and/or optoelectronic applications. Said method comprises a step of annealing said material under an oxidizing atmosphere and a step of polishing said material with an abrasive, based on colloidal silica particles. Said polishing step can be carried out by means of a polishing head (10), into which a substrate (12) of semiconductor material is introduced. The abrasive liquid is injected into the head, for example, via a lateral duct (18). A pressure (20) and a movement, indicated by the arrow (22), are applied to the head (10), for polishing against a polishing cloth (14). The combination of both steps permits a satisfactory surface state to be obtained, especially in the case of silicon carbide.

公开(公告)号：EP1536918A1

公开(公告)日：2005-06-08

申请号：EP03784424.8

申请日：2003-07-30

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： RICHTARCH, Claire ,  LETERTRE, Fabrice

IPC分类号： B24B37/04 ,  C30B33/00 ,  C09K3/14

CPC分类号： C30B33/00 ,  B24B37/044 ,  C09K3/1409 ,  C09K3/1463

摘要： The invention relates to a method of polishing a wafer of material, the method implementing at least one step of polishing with an abrasive based on diamond particles in suspension in a solution, wherein the abrasive mixture used implements diamond particles and silica particles with a diamond/silica volume ratio that is controlled to obtain desired roughness for the wafer.

公开(公告)号：EP1646478B1

公开(公告)日：2007-02-07

申请号：EP04767750.5

申请日：2004-07-22

申请人： S.O.I.TEC. Silicon on Insulator Technologies S.A.

发明人： RICHTARCH, Claire

IPC分类号： B24B37/04 ,  H01L21/304

CPC分类号： B24B37/042 ,  H01L21/02024 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/1608 ,  Y10S438/931

摘要： The invention relates to a method for surface treatment of a wafer of semiconductor material for microelectronic and/or optoelectronic applications. Said method comprises a step of annealing said material under an oxidizing atmosphere and a step of polishing said material with an abrasive, based on colloidal silica particles. Said polishing step can be carried out by means of a polishing head (10), into which a substrate (12) of semiconductor material is introduced. The abrasive liquid is injected into the head, for example, via a lateral duct (18). A pressure (20) and a movement, indicated by the arrow (22), are applied to the head (10), for polishing against a polishing cloth (14). The combination of both steps permits a satisfactory surface state to be obtained, especially in the case of silicon carbide.

公开(公告)号：EP1646478A1

公开(公告)日：2006-04-19

申请号：EP04767750.5

申请日：2004-07-22

申请人： S.O.I.TEC. Silicon on Insulator Technologies S.A.

发明人： RICHTARCH, Claire

IPC分类号： B24B37/04 ,  H01L21/304

CPC分类号： B24B37/042 ,  H01L21/02024 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/1608 ,  Y10S438/931

摘要： The invention relates to a method for surface treatment of a wafer of semiconductor material for microelectronic and/or optoelectronic applications. Said method comprises a step of annealing said material under an oxidizing atmosphere and a step of polishing said material with an abrasive, based on colloidal silica particles. Said polishing step can be carried out by means of a polishing head (10), into which a substrate (12) of semiconductor material is introduced. The abrasive liquid is injected into the head, for example, via a lateral duct (18). A pressure (20) and a movement, indicated by the arrow (22), are applied to the head (10), for polishing against a polishing cloth (14). The combination of both steps permits a satisfactory surface state to be obtained, especially in the case of silicon carbide.