公开(公告)号：EP1622160A2

公开(公告)日：2006-02-01

申请号：EP05254637.1

申请日：2005-07-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kim, Tae-wan ,  Park, Wan-jun ,  Park, Sang-jin ,  Hwang, In-jun, Samsung Adv. Inst. of Technology ,  Kwon, Soon-ju Pohang Univ. of Science & Technology ,  Kim, Young-keun ,  Gambino, Richard J., Stony Brook University

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes: a lower magnetic film; a tunneling film formed on the lower magnetic film; an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

摘要翻译： 使用旋电荷提供的是一种多用途的磁性膜的结构，其制造方法，具有相同的半导体装置，以及操作所述半导体存储器件的方法。 多用途磁性膜结构包括：一个下磁膜 - ; 隧道膜形成在该下磁膜 - ; 在上磁膜形成在隧穿电影，worin下和上磁膜是下和上磁之间形成电化学电势差存在当膜具有相反的磁化方向的铁磁膜。

公开(公告)号：EP1622160B1

公开(公告)日：2008-09-10

申请号：EP05254637.1

申请日：2005-07-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kim, Tae-wan ,  Park, Wan-jun ,  Park, Sang-jin ,  Hwang, In-jun, Samsung Adv. Inst. of Technology ,  Kwon, Soon-ju Pohang Univ. of Science & Technology ,  Kim, Young-keun ,  Gambino, Richard J., Stony Brook University

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

公开(公告)号：EP1622160A3

公开(公告)日：2006-07-05

申请号：EP05254637.1

申请日：2005-07-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kim, Tae-wan ,  Park, Wan-jun ,  Park, Sang-jin ,  Hwang, In-jun, Samsung Adv. Inst. of Technology ,  Kwon, Soon-ju Pohang Univ. of Science & Technology ,  Kim, Young-keun ,  Gambino, Richard J., Stony Brook University

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes: a lower magnetic film; a tunneling film formed on the lower magnetic film; an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

摘要翻译： 本发明提供一种使用自旋电荷的多用途磁性膜结构及其制造方法，具有该结构的半导体器件以及该半导体存储器件的操作方法。 多用途磁性膜结构包括：下磁膜; 形成在下磁膜上的隧穿膜; 形成在所述隧穿膜上的上磁膜，其中当所述下磁膜和所述上磁膜具有相反的磁化方向时，所述下磁膜和上磁膜是形成它们之间的电化学电位差的铁磁膜。