METHOD AND APPARATUS FOR MONITORING PLASMA PROCESSING OPERATIONS
    1.
    发明公开
    METHOD AND APPARATUS FOR MONITORING PLASMA PROCESSING OPERATIONS 审中-公开
    方法和装置等离子处理操作注视着董先生

    公开(公告)号:EP1105703A4

    公开(公告)日:2005-08-03

    申请号:EP99918803

    申请日:1999-04-23

    Applicant: SANDIA CORP

    CPC classification number: G01J3/443 G01J3/28 G01J2003/2866

    Abstract: The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in some manner to calibrating or initializing a plasma monitoring assembly (174). This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window (124) through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber (74).

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