摘要:
A method of making a thermoelectric device (11) which is small, thin and capable of increasing a number of thermoelectric material chips (13, 14) per unit area. Respective thermoelectric material wafers (40) of P-type and N-type are bonded to substrates (42) for P-type and N-type provided with electrodes (43) each producing a gap therebetween. The thermoelectric material wafer bonded to the substrate is formed into the substrate bonded with thermoelectric material chips by cutting and eliminating unnecessary portions by utilising the gap. The substrates respectively bonded with P-type thermoelectric material chips and N-type thermoelectric material chips are opposed and distal ends of the chips and the electrodes on the substrate are bonded to thereby form PN junctions. Further, structures (44) are provided at surroundings of bonding portions on the substrate for positioning the bondings and for preventing a bonding material from oozing.
摘要:
A thermoelectric conversion device is manufactured by the following steps of forming. A metallic material is formed on a substrate. A photosensitive resin pattern is formed on the metallic material. Patterned n-type or p-type thermoelectric material elements having a predetermined thickness and electrode junction layers is formed by plating. Next, the photosensitive resin pattern is dissolved and the metallic material is removed. And the substrate having the p-type thermoelectric material elements and the substrate having the n-type thermoelectric material elements are joined with the electrode junction layers interposed between the each thermoelectric material elements and the opposed substrate.
摘要:
A method of making a thermoelectric device (11) which is small, thin and capable of increasing a number of thermoelectric material chips (13, 14) per unit area. Respective thermoelectric material wafers (40) of P-type and N-type are bonded to substrates (42) for P-type and N-type provided with electrodes (43) each producing a gap therebetween. The thermoelectric material wafer bonded to the substrate is formed into the substrate bonded with thermoelectric material chips by cutting and eliminating unnecessary portions by utilising the gap. The substrates respectively bonded with P-type thermoelectric material chips and N-type thermoelectric material chips are opposed and distal ends of the chips and the electrodes on the substrate are bonded to thereby form PN junctions. Further, structures (44) are provided at surroundings of bonding portions on the substrate for positioning the bondings and for preventing a bonding material from oozing.
摘要:
A thermoelectric conversion device is manufactured by the following steps of forming. A metallic material is formed on a substrate. A photosensitive resin pattern is formed on the metallic material. Patterned n-type or p-type thermoelectric material elements having a predetermined thickness and electrode junction layers is formed by plating. Next, the photosensitive resin pattern is dissolved and the metallic material is removed. And the substrate having the p-type thermoelectric material elements and the substrate having the n-type thermoelectric material elements are joined with the electrode junction layers interposed between the each thermoelectric material elements and the opposed substrate.
摘要:
A rare earth-iron magnet consisting of a magnetic phase based on one or more rare earth elements and iron, has a sealing agent (2) filling the voids between grains of the magnet, and a coating layer (3) formed on the surface of the magnet.
摘要:
A rare earth-iron magnet consisting of a magnetic phase based on one or more rare earth elements and iron, has a sealing agent (2) filling the voids between grains of the magnet, and a coating layer (3) formed on the surface of the magnet.