公开(公告)号：EP0984314A2

公开(公告)日：2000-03-08

申请号：EP99117293.3

申请日：1999-09-02

申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei, c/o Semiconductor Energy

IPC分类号： G02F1/1335

CPC分类号： G02F1/133609 ,  G02B6/0013 ,  G02B6/0038 ,  G02F1/133603 ,  G02F1/13454 ,  G02F2001/133616 ,  G02F2001/133622

摘要： An electronic device, such as personal computer, incorporating a liquid crystal panel which uses LEDs as an illuminating light source for a liquid crystal panel to reduce power consumption and size of the electronic device. When 3-color LED lamps 13R, 13G, 13B of the LED light source 12 are lit, red, green and blue rays emitted from respective LED lamps enter the scatterplate 11 where they are scattered and mixed to produce white light LW which goes out from the entire surface of the scatterplate 11 to illuminate the entire rear surface of the transmission type liquid crystal panel 10. The white light LW that has entered the liquid crystal panel 10 is modulated according to the alignment of the liquid crystal material and passes through the color filters of the counter substrate. The user can view the transmitted light LT from the liquid crystal panel 10 as a color image.

摘要翻译： 一种电子设备，例如个人计算机，其内置使用LED作为液晶面板的照明光源的液晶面板，以降低电子设备的功耗和尺寸。 当LED光源12的三色LED灯13R，13G，13B点亮时，从各个LED灯发射的红色，绿色和蓝色光进入散射板11，在那里它们被散射和混合以产生白光LW， 散射板11的整个表面照射透射型液晶面板10的整个后表面。已经进入液晶面板10的白光LW根据液晶材料的排列进行调制并且通过颜色 反基板的过滤器。 用户可以将来自液晶面板10的透射光LT视为彩色图像。

公开(公告)号：EP1028469A3

公开(公告)日：2009-04-15

申请号：EP00102887.7

申请日：2000-02-11

申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei, c/o Semiconductor Energy ,  Tanaka, Yukio, c/o Semiconductor Energy ,  Koyama, Jun, c/o Semiconductor Energy ,  Osame, Mitsuaki, c/o Semiconductor Energy ,  Murakami, Satoshi, c/o Semiconductor Energy ,  Ohnuma, Hideto, c/o Semiconductor Energy ,  Fujimoto, Etsuko, c/o Semiconductor Energy ,  Kitakado, Hidehito, c/o Semiconductor Energy

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L51/5246 ,  H01L51/5284 ,  H01L2227/323

摘要： A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.

公开(公告)号：EP1028469A2

公开(公告)日：2000-08-16

申请号：EP00102887.7

申请日：2000-02-11

申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei, c/o Semiconductor Energy ,  Tanaka, Yukio, c/o Semiconductor Energy ,  Koyama, Jun, c/o Semiconductor Energy ,  Osame, Mitsuaki, c/o Semiconductor Energy ,  Murakami, Satoshi, c/o Semiconductor Energy ,  Ohnuma, Hideto, c/o Semiconductor Energy ,  Fujimoto, Etsuko, c/o Semiconductor Energy ,  Kitakado, Hidehito, c/o Semiconductor Energy

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L51/5246 ,  H01L51/5284 ,  H01L2227/323

摘要： A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.

摘要翻译： 一种半导体器件，其中根据电路的性能排列了合适结构的TFT，并且形成占据小面积的存储电容器，该半导体器件具有高性能和明亮图像。 根据重视工作速度的电路和重视栅极绝缘击穿电压的电路，栅极绝缘膜的厚度不同，用于形成LDD区域的位置根据TFT而不同 重视应对热载流子的对策和重视防止截止电流对策的TFT。 这使得可以实现高性能的半导体器件。 此外，存储容量由遮光膜及其氧化物形成以使其面积最小化，并且实现了能够显示明亮图像的半导体器件。