公开(公告)号：EP2481264A4

公开(公告)日：2016-01-27

申请号：EP10813608

申请日：2010-08-05

申请人： SEMICONDUCTOR ENERGY LAB

发明人： NOWATARI HIROMI ,  SEO SATOSHI

IPC分类号： H05B33/12 ,  H01L51/52 ,  H01L51/54

CPC分类号： H01L51/0067 ,  H01L27/3209 ,  H01L51/001 ,  H01L51/0032 ,  H01L51/0053 ,  H01L51/006 ,  H01L51/0081 ,  H01L51/5004 ,  H01L51/504 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5278

摘要： A light-emitting element is provided, in which n (n is a natural number of two or more) EL layers are provided between an anode and a cathode. Between the m-th (in is a natural number, 1≦̸m≦̸n−1) EL layer and the (m+1)-th EL layer, a first layer containing any of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, and a rare earth metal compound, a second layer containing a substance having high electron-transport properties in contact with the first layer, and a charge-generation layer containing a substance having high hole-transport properties and an acceptor substance in contact with the second layer are provided in this order over the anode. The charge-generation layer does not have a peak of an absorption spectrum in a visible light region.

公开(公告)号：EP2436233A4

公开(公告)日：2013-09-18

申请号：EP10780432

申请日：2010-05-10

申请人： SEMICONDUCTOR ENERGY LAB

发明人： NOWATARI HIROMI ,  SEO SATOSHI ,  OHSAWA NOBUHARU ,  USHIKUBO TAKAHIRO ,  TSUTSUI TETSUO

IPC分类号： H05B33/12 ,  B82Y10/00 ,  H01L51/00 ,  H01L51/50

CPC分类号： H01L51/504 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/5004 ,  H01L51/5044 ,  H01L51/5278

摘要： An object is to provide a light-emitting element capable of emitting light with a high luminance even at a low voltage, and having a long lifetime. The light-emitting element includes n EL layers between an anode and a cathode (n is a natural number of two or more), and also includes, between m-th EL layer from the anode and (m+1)-th EL layer (m is a natural number, 1@m@n-1), a first layer including a first donor material in contact with the m-th EL layer, a second layer including an electron-transport material and a second donor material in contact with the first layer, and a third layer including a hole-transport material and an acceptor material in contact with the second layer and the (m+1)-th EL layer.