利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

12 条记录 (耗时 0.012 秒)

    Drain/source contact of a thin film transistor
    3.
    发明公开
    Drain/source contact of a thin film transistor 失效
    用于薄膜晶体管的漏极/源极接触。

    公开(公告)号：EP0622855A3

    公开(公告)日：1996-04-17

    申请号：EP94303130.2

    申请日：1994-04-29

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Kawai, Katsuhiro ,  Katayama, Mikio

    IPC分类号： H01L29/784 ,  H01L29/08 ,  H01L29/52 ,  H01L29/10

    CPC分类号： H01L29/41733 ,  H01L29/78618 ,  H01L29/78669

    摘要： The thin film transistor of the invention includes a substrate; a gate electrode (21) formed on the substrate; a semiconductor layer (27) insulated from the gate electrode (21), the semiconductor layer (27) being formed on the substrate to cover the gate electrode (21); a first contact layer (24) and a second contact layer (25) which are made of n-type microcrystalline silicon having a resistivity of 10 Ωcm or less, the first and second contact layers (24,25) being in contact with the semiconductor layer (27) so as to cover part of the gate electrode (21); a source electrode (22) which is in contact with part of the first contact layer (24); and a drain electrode (23) which is in contact with part of the second contact layer (25).

    Drain/source contact of a thin film transistor
    6.
    发明公开
    Drain/source contact of a thin film transistor 失效
    排水/源 - 接头Dünnfilm晶体管。

    公开(公告)号：EP0622855A2

    公开(公告)日：1994-11-02

    申请号：EP94303130.2

    申请日：1994-04-29

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Kawai, Katsuhiro ,  Katayama, Mikio

    IPC分类号： H01L29/784 ,  H01L29/08 ,  H01L29/52 ,  H01L29/10

    CPC分类号： H01L29/41733 ,  H01L29/78618 ,  H01L29/78669

    摘要： The thin film transistor of the invention includes a substrate; a gate electrode (21) formed on the substrate; a semiconductor layer (27) insulated from the gate electrode (21), the semiconductor layer (27) being formed on the substrate to cover the gate electrode (21); a first contact layer (24) and a second contact layer (25) which are made of n-type microcrystalline silicon having a resistivity of 10 Ωcm or less, the first and second contact layers (24,25) being in contact with the semiconductor layer (27) so as to cover part of the gate electrode (21); a source electrode (22) which is in contact with part of the first contact layer (24); and a drain electrode (23) which is in contact with part of the second contact layer (25).

    摘要翻译： 本发明的薄膜晶体管包括：基板; 形成在所述基板上的栅电极（21） 与所述栅电极绝缘的半导体层（27），所述半导体层（27）形成在所述基板上以覆盖所述栅电极（21）; 第一接触层（24）和第二接触层（25），其由电阻率为10欧姆·厘米或更小的n型微晶硅制成，所述第一和第二接触层（24,25）与 半导体层（27），以覆盖栅电极（21）的一部分; 与所述第一接触层（24）的一部分接触的源极（22）; 和与第二接触层（25）的一部分接触的漏电极（23）。

    A dry etching method of a silicon thin film
    7.
    发明公开
    A dry etching method of a silicon thin film 失效
    硅薄膜的干蚀刻方法

    公开(公告)号：EP0600664A2

    公开(公告)日：1994-06-08

    申请号：EP93309400.5

    申请日：1993-11-25

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Sakurai, Takehisa ,  Ujimasa, Hitoshi ,  Kawai, Katsuhiro ,  Ban,Atsushi ,  Kajitani, Masaru ,  Katayama, Mikio

    IPC分类号： H01L21/321 ,  H01L21/336

    CPC分类号： H01L29/66765 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/32137

    摘要： In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chlorine gas.

    摘要翻译： 在根据本发明的用于选择性地蚀刻多层结构的第二硅层的方法中，第二硅层被选择性地蚀刻，所述第二硅层包括第一硅层和形成在第一硅层上并且掺杂有杂质的第二硅层， 包括氟利昂-14气体和选自氯化氢气体和氯气的气体的蚀刻气体。

    An active matrix substrate
    8.
    发明公开
    An active matrix substrate 失效
    有源矩阵基板

    公开(公告)号：EP0488808A2

    公开(公告)日：1992-06-03

    申请号：EP91311150.6

    申请日：1991-11-29

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Okamoto, Masaya ,  Katayama, Mikio ,  Kanemori, Yuzuru ,  Kawai, Katsuhiro ,  Fujiki, Hiroshi ,  Tachibana, Makoto

    IPC分类号： G02F1/136

    CPC分类号： G02F1/136213 ,  G02F1/136259

    摘要： An active matrix display substrate in which each picture element comprises a pixel electrode (2) which consists of a transparent conductive film divided into an additional capacitance portion (2b) and a non-additional capacitance portion (2a), an additional capacitance electrode (15) facing the additional capacitance portion (2b) with an insulating film (9) therebetween, and a conductive film portion (30) electrically connecting the additional capacitance portion (2b) and the non-additional capacitance portion (2a), wherein the transparent conductive film has a wider width than the conductive film portion (30) and covers the conductive film portion (30).

    摘要翻译： 一种有源矩阵显示基板，其中每个像素包括由分成附加电容部分（2b）和非附加电容部分（2a）的透明导电膜组成的像素电极（2），附加电容电极（15） ）与附加电容部分（2b）之间具有绝缘膜（9），以及导电膜部分（30），电连接附加电容部分（2b）和非附加电容部分（2a），其中透明导电 薄膜具有比导电膜部分（30）更宽的宽度并覆盖导电膜部分（30）。

    A dry etching method of a silicon thin film
    9.
    发明公开
    A dry etching method of a silicon thin film 失效
    Trocken-Ätz-Verfahrenfüreine Silizium-Dünnschicht。

    公开(公告)号：EP0600664A3

    公开(公告)日：1994-11-23

    申请号：EP93309400.5

    申请日：1993-11-25

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Sakurai, Takehisa ,  Ujimasa, Hitoshi ,  Kawai, Katsuhiro ,  Ban,Atsushi ,  Kajitani, Masaru ,  Katayama, Mikio

    IPC分类号： H01L21/321 ,  H01L21/336

    CPC分类号： H01L29/66765 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/32137

    摘要： In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chlorine gas.

    摘要翻译： 在根据本发明的选择性蚀刻包括第一硅层和形成在第一硅层上并掺杂有杂质的第二硅层的多层结构的第二硅层的方法中，通过使用第二硅层选择性地蚀刻第二硅层， 包括氟利昂-14气体的蚀刻气体和选自氯化氢气体和氯气的气体。

    An active matrix substrate
    10.
    发明公开
    An active matrix substrate 失效
    主动矩阵基板

    公开(公告)号：EP0488808A3

    公开(公告)日：1992-11-04

    申请号：EP91311150.6

    申请日：1991-11-29

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Okamoto, Masaya ,  Katayama, Mikio ,  Kanemori, Yuzuru ,  Kawai, Katsuhiro ,  Fujiki, Hiroshi ,  Tachibana, Makoto

    IPC分类号： G02F1/136

    CPC分类号： G02F1/136213 ,  G02F1/136259

    摘要： An active matrix display substrate in which each picture element comprises a pixel electrode (2) which consists of a transparent conductive film divided into an additional capacitance portion (2b) and a non-additional capacitance portion (2a), an additional capacitance electrode (15) facing the additional capacitance portion (2b) with an insulating film (9) therebetween, and a conductive film portion (30) electrically connecting the additional capacitance portion (2b) and the non-additional capacitance portion (2a), wherein the transparent conductive film has a wider width than the conductive film portion (30) and covers the conductive film portion (30).