摘要:
Disclosed is an improvement of the chemical vapor deposition (CVD) process for preparing an electroluminescent device having a large area and a large size. The process comprises forming a luminescent layer on a substrate by a reduced-pressure chemical vapor deposition method wherein a source material gas is introduced into a reaction chamber; an improvement being present in that; the reaction chamber includes a screening means which screens the source material gas flow in the chamber to form a first area in which the gas is flowing and a second area in which the gas substantially does not flow, the screening means has apertures for connecting the first area and the second area, the substrate is placed in the second area, to which the source material is supplied by means of gas diffusion.
摘要:
A process for preparing an electroluminescent film which comprises causing a substrate (5) held at a high temperature to simultaneous contact with two kinds of vapors of (a) Group II element and a Group VI element or a compound (6) thereof capable of forming a Group II - VI compound semiconductor, and (b) a halide (12) of an element capable of acting as luminescent centers in a Group II - VI compound semiconductor, under the flowing of a hydrogen or inert gas (11), whereby a thin electroluminescent film comprising the Group II - VI compound semiconductor and containing the element forming the luminescent centers is formed on the surface of the substrate.
摘要:
The present invention provides a thin film EL device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer interposed between the three layers, the emitting layer containing atoms of a rare-earth element and fluorine atoms in its host material, the atom ratio (F/RE) of the fluorine atoms (F) to the rare-earth atoms (RE) being adjusted to the range of 0.5 to 2.5, and a process for producing the EL device being characterized in that the emitting layer is prepared by forming a film under a condition substantially free from oxygen gas and/ or moisture and subjecting the film to a heat treatment at a temperature of 200°C to 700°C so that the host material of the emitting layer contains atoms of a rare-earth element (RE) and fluorine atoms (F) in an adjusted atom raito (F/RE) in the range of 0.5 to 2.5. The present invention affords a thin film EL device which emits, for example, a green luminescence with a high brightness.
摘要:
A thin film EL displaying apparatus which includes a first thin film EL element, a second thin film EL elements, each element being composed of an EL layer sandwiched between a pair of upper (2, 6) and lower electrodes (12, 16), a first (1) and a second substrates (11) provided respectively with the first (4) and the second thin film EL (14) elements, and an insulating film (3, 13) (5, 15) on the front and rear surfaces of which conductive films for leads are formed. The first (1) and the second substrates (11) are laminated in a manner that the first (4) and the second thin film EL (14) elements face each other and the insulating film (22) are sandwiched therein, and the insulating film (22) is disposed so that one end of each of the conductive film on front and rear surface thereof is brought in contact with and is electrically connected with the upper electrode (2) or lower electrode (12) of the first EL element and the respectively corresponding electrode of the second EL elements, while the other end of each of the conductive films can be connected to an external driving circuit.
摘要:
A thin film EL device having a double-insulated structure and comprising an emitting layer made of an alkaline-earth sulfide as its host material and doped with Eu²⁺ for providing luminescent centers. The emitting layer has a Eu concentration of 0.l5 to 0.75 atm. % and a controlled thickness of at least l.3 µm to impart hysteresis to the brightness vs. applied voltage characteristics of the device.
摘要:
A thin film EL device having a double-insulated structure and comprising an emitting layer made of an alkaline-earth sulfide as its host material and doped with Eu²⁺ for providing luminescent centers. The emitting layer has a Eu concentration of 0.l5 to 0.75 atm. % and a controlled thickness of at least l.3 µm to impart hysteresis to the brightness vs. applied voltage characteristics of the device.