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    A method for forming a thin semiconductor film and a plasma CVD apparatus to be used in this method
    3.
    发明公开
    A method for forming a thin semiconductor film and a plasma CVD apparatus to be used in this method 失效
    HerstellungsverfahrenfüreinendünnenHalbleiterfilm

    公开(公告)号：EP0727826A2

    公开(公告)日：1996-08-21

    申请号：EP96301052.5

    申请日：1996-02-16

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Tomita, Takashi ,  Nomoto, Katsuhiko ,  Yamamoto, Yoshihiro ,  Sannomiya, Hitoshi ,  Takagi, Sae

    IPC分类号： H01L31/20 ,  C23C18/50

    CPC分类号： C23C16/515 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： A method for producing a thin semiconductor film according to the present invention includes the steps of: placing a group-IV compound or a derivative thereof in a plasma state; decomposing the group-IV compound or the derivative thereof into active species; and depositing the active species on a substrate, wherein energy for generating plasma is intermittently supplied at a supply time interval which is equal to or less than a reciprocal of {(secondary reaction rate constant of a source gas reacting with active species other than long-life active species within the plasma) × (number of source gas molecules)}.

    摘要翻译： 根据本发明的薄半导体膜的制造方法包括以下步骤：将IV族化合物或其衍生物置于等离子体状态; 将IV族化合物或其衍生物分解成活性物质; 并且将活性物质沉积在基板上，其中用于产生等离子体的能量以等于或小于ä的倒数的供给时间间隔间歇地供给（源气体与除长时间以外的活性物质反应的二次反应速率常数） 血浆中的生命活性物质）x（源气体分子数）ü。

    Plasma chemical vapor deposition device capable of suppressing generation of polysilane powder
    4.
    发明公开
    Plasma chemical vapor deposition device capable of suppressing generation of polysilane powder 失效
    Einrichtung zur PCVD-Beschichtung geeignet zurunterdrückungvon Polysilanpulver。

    公开(公告)号：EP0659905A1

    公开(公告)日：1995-06-28

    申请号：EP94309666.9

    申请日：1994-12-22

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Chida, Atsushi ,  Nomoto, Katsuhiko ,  Yamamoto, Yoshihiro ,  Sannomiya, Hitoshi ,  Okamoto, Hiroshi

    IPC分类号： C23C16/44 ,  C23C16/50 ,  H01J37/00

    CPC分类号： C23C16/4401 ,  C23C16/5096 ,  H01J37/32724

    摘要： There is provided a plasma CVD device which can deposit a high-quality a-Si:H or other film at a high rate, and which can improve production efficiency thereof remarkably. The CVD device has a substrate holding electrode (11) and a high frequency application electrode (13) arranged opposite to and parallel to a substrate (20) held by the substrate holding electrode (11). A material gas introduced between the substrate holding electrode (11) and the high frequency application electrode (13) is decomposed by glow discharge, so that a thin film is deposited on the heated substrate (20). A first electrode heater (17) for heating a peripheral portion of the high frequency application electrode (13) is installed along the peripheral portion of the high frequency application electrode (13). A second electrode heater (18) for heating the peripheral portion of the high frequency application electrode (13) and a surface of the high frequency application electrode (13) opposite to its surface facing the substrate (20) is composed of a bottom portion (18b) and a side portion (18a) provided uprightly along a peripheral edge of the bottom portion (18b) and formed in a concave shape to surround the high frequency application electrode (13) with a spacing therebetween.

    摘要翻译： 提供了能够以高速率沉积高品质的a-Si：H或其他膜的等离子体CVD装置，能够显着地提高其生产效率。 CVD装置具有与由基板保持电极（11）保持的基板（20）相对并平行布置的基板保持电极（11）和高频施加电极（13）。 在基板保持电极（11）和高频施加电极（13）之间引入的原料气体被辉光放电分解，从而在被加热的基板（20）上沉积薄膜。 用于加热高频施加电极（13）的周边部分的第一电极加热器（17）沿着高频施加电极（13）的周边部分安装。 用于加热高频施加电极（13）的周边部分的第二电极加热器（18）和与其面对衬底（20）的表面相对的高频施加电极（13）的表面由底部 18b）和沿着底部（18b）的周缘垂直设置并形成为凹形的侧部（18a），以围绕高频施加电极（13）间隔开。

    An image display/input apparatus
    6.
    发明公开
    An image display/input apparatus 失效
    Bildanzeige - / - eingabegerät

    公开(公告)号：EP0707407A1

    公开(公告)日：1996-04-17

    申请号：EP95304080.5

    申请日：1995-06-13

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Yoshida, Yasuhiro ,  Takahama, Kengo ,  Takeda, Yoshihiko ,  Yamamoto, Yoshihiro

    IPC分类号： H04N1/028 ,  H04N1/031

    CPC分类号： H04N1/02805 ,  H04N1/028 ,  H04N1/031

    摘要： A backlight (122) emits diffused light beams. An emission direction characteristic-forming plate (123) allows light beams which have been incident thereon at generally right angles therewith to pass therethrough and intercepts light beams which have been incident thereon obliquely. An image display/input panel (121) has light receiving elements each incorporated in a corresponding pixel having a liquid crystal cell. In an image input operation, pixels are sequentially turned on and off so as to scan an original document (125) by parallel light emitted vertically from a turned-on pixel. Light reflected by the original document (125) is received by the light receiving element incorporated in the turned-on pixel and converted into an electric signal. Light emitted from the turned-on pixel of the image display/input panel (121) and reflected by the original document (125) is received by only the turned-on pixel. In this manner, a high resolution can be obtained in the image input operation.

    摘要翻译： 背光（122）发射漫射光束。 发射方向特性形成板（123）允许入射到其上的光束与其大致成直角的光束通过，并截取入射到其上的光束。 图像显示/输入面板（121）具有各自包含在具有液晶单元的相应像素中的光接收元件。 在图像输入操作中，顺序地打开和关闭像素，以便通过从开启像素垂直发射的平行光来扫描原稿（125）。 由原始文件（125）反射的光被并入被打开的像素中的光接收元件接收并转换为电信号。 从图像显示/输入面板（121）的被打开的像素发射并由原始文档（125）反射的光仅由打开的像素接收。 以这种方式，可以在图像输入操作中获得高分辨率。