公开(公告)号：EP4435515A1

公开(公告)日：2024-09-25

申请号：EP24160203.6

申请日：2024-02-28

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： SATO, Takehiro ,  KIKUCHI, Shun ,  MITSUI, Ryo ,  TACHIBANA, Seiichiro

IPC分类号： G03F7/075

CPC分类号： G03F7/0752

摘要： The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol% or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film.