公开(公告)号：EP0602995A3

公开(公告)日：1995-09-20

申请号：EP93310226.1

申请日：1993-12-17

申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

发明人： Fujimaki, Nobuyoshi, c/o Shin-Etsu Hand. Co., Ltd

IPC分类号： H01L21/316 ,  H01L21/3105 ,  C30B33/00

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  Y10S438/909 ,  Y10S438/935

摘要： In a process and apparatus for manufacturing a MOS device, a first clearance speed (X) of an annealing gas and optionally also of an oxidising gas, defined as the ratio of the flow rate to the area of clearance between a semiconductor wafer (4) and the interior surface of a tube (2) of a furnace (1) is controlled, e.g. to be at least 30 cm/min, while the semiconductor wafer is annealed and, optionally, oxidised. A second clearance speed (Y) of annealing gas is also controlled, e.g. to be at least 100 cm/min, while the semiconductor wafer is taken out of the tube. Further, the relation between X and Y is controlled, e.g. so that Y s -2.5 X + 275. The process and the apparatus reduce and control the fixed-charge density in the oxide film of a MOS device, with high repeatability.

摘要翻译： 在用于制造MOS器件的工艺和设备中，定义为半导体晶片（4）和第二半导体晶片（4）之间的流速与间隙面积之比的退火气体和任选的氧化气体的第一间隙速度（X） 并且控制炉（1）的管（2）的内表面，例如 至少30cm / min，而半导体晶片被退火并任选地被氧化。 也控制退火气体的第二清除速度（Y），例如。 至少100cm / min，同时将半导体晶片从管中取出。 此外，控制X和Y之间的关系。 使得Y> / = -2.5X + 275.该方法和装置降低并控制MOS器件的氧化膜中的固定电荷密度，具有高重复性。

公开(公告)号：EP0602995A2

公开(公告)日：1994-06-22

申请号：EP93310226.1

申请日：1993-12-17

申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

发明人： Fujimaki, Nobuyoshi, c/o Shin-Etsu Hand. Co., Ltd

IPC分类号： H01L21/316 ,  H01L21/3105 ,  C30B33/00

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  Y10S438/909 ,  Y10S438/935

摘要： In a process and apparatus for manufacturing a MOS device, a first clearance speed (X) of an annealing gas and optionally also of an oxidising gas, defined as the ratio of the flow rate to the area of clearance between a semiconductor wafer (4) and the interior surface of a tube (2) of a furnace (1) is controlled, e.g. to be at least 30 cm/min, while the semiconductor wafer is annealed and, optionally, oxidised. A second clearance speed (Y) of annealing gas is also controlled, e.g. to be at least 100 cm/min, while the semiconductor wafer is taken out of the tube. Further, the relation between X and Y is controlled, e.g. so that Y s -2.5 X + 275. The process and the apparatus reduce and control the fixed-charge density in the oxide film of a MOS device, with high repeatability.