METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    3.
    发明授权
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:EP1394844B1

    公开(公告)日:2009-01-21

    申请号:EP02730853.5

    申请日:2002-05-31

    IPC分类号: H01L21/318 C23C16/30

    摘要: A method of fabricating a semiconductor device, capable of improving the in-plane uniformity of a silicon nitride film or a silicon oxynitride film to be formed, and increasing a production efficiency at the film forming. The method comprises the steps of forming on a silicon substrate a first film consisting of a silicon oxide film or a silicon oxynitride film, forming a second film consisting of one tetrachlorosilane monomolecular layer, and nitriding the second film to form a third film consisting of one silicon nitride monomolecular layer. The second film forming step and the third film forming steps are repeated specified number of times to form a silicon nitride film of a specified film thickness. A fabrication device comprises a plurality of silicon substrates disposed on shelf-shaped wafer ports, a process gas being supplied toward above a reaction pipe from a process gas supply pipe.

    摘要翻译: 一种制造半导体器件的方法,其能够改善待形成的氮化硅膜或氧氮化硅膜的面内均匀性,并提高成膜时的生产效率。 该方法包括以下步骤:在硅衬底上形成由氧化硅膜或氮氧化硅膜组成的第一膜,形成由一个四氯硅烷单分子层组成的第二膜,以及氮化第二膜以形成由一个 氮化硅单分子层。 重复第二成膜步骤和第三成膜步骤规定次数以形成特定膜厚的氮化硅膜。 一种制造装置包括设置在架状晶片端口上的多个硅衬底,工艺气体从工艺气体供应管朝向反应管上方供应。

    A method for producing silicon nitride series film
    4.
    发明公开
    A method for producing silicon nitride series film 审中-公开
    硅氮化物膜的制造方法

    公开(公告)号:EP1081756A3

    公开(公告)日:2004-02-11

    申请号:EP00203022.9

    申请日:2000-08-30

    申请人: ASM JAPAN K.K.

    摘要: A method for producing a plasma silicon nitride series film with a small heat load having a low hydrogen concentration is provided. The method is for producing a silicon nitride series film on a material to be treated using a plasma CVD apparatus having a reaction chamber evacuated to vacuum. The method comprises the steps of introducing a monosilane gas (SiH 4 ) and a nitrogen gas (N 2 ) as raw material gases into the reaction chamber at prescribed flow rates, and heating the material to be treated to a prescribed temperature. At this time, it is characterized in that the flow rate of the nitrogen gas is at least 100 times the flow rate of the monosilane gas.

    Gas recirculation flow control method and apparatus for use in vacuum system for semiconductor manufacture
    5.
    发明公开
    Gas recirculation flow control method and apparatus for use in vacuum system for semiconductor manufacture 审中-公开
    用于在真空系统中使用的半导体制造气体再循环流控制方法和装置

    公开(公告)号:EP1243667A2

    公开(公告)日:2002-09-25

    申请号:EP02006584.3

    申请日:2002-03-21

    IPC分类号: C23C16/50 H01L21/00

    摘要: A gas recirculation flow control method and apparatus for use in an evacuation system having a vacuum chamber into which a gas is introduced, a first vacuum pump for exhausting the gas from the vacuum chamber and reducing the pressure in the vacuum chamber to a desired pressure, a second vacuum pump for performing evacuation to lower the back pressure of the first vacuum pump below an allowable back pressure, and a gas recirculation line for returning a part of gas exhausted from the first vacuum pump to the vacuum chamber. The recirculation flow rate Q 2 of the gas returning to the vacuum chamber through the gas recirculation line is controlled by adjusting the differential pressure Pd-Pc in the gas recirculation line by varying the effective pumping speed of the second vacuum pump using the following relationship: Q 2 =C×(Pd-Pc)    where: Q 2 denotes the recirclllation flow rate of the gas returning to the vacuum chamber through the gas recirculation line; Pc denotes the pressure in the vacuum chamber; Pd denotes the pressure in the upstream side of the gas recirculation line; and C denotes the conductance of the gas recirculation line.

    摘要翻译: 用于在排气系统具有真空室,其一个气体引入中使用的气体再循环流控制方法和装置,一第一真空泵,用于从真空腔室排出该气体和还原在该真空室中的压力至所需压力, 第二真空泵,用于执行抽真空,以降低所述第一真空泵的下面到允许背压背压,以及用于返回从所述第一真空泵到真空室排出的气体的一部分的气体再循环管线。 气体通过气体再循环管线返回到真空腔室的再循环流量Q2是通过使用下面的关系改变第二真空泵的有效排气速度调整差动压力Pd-PC在气体再循环管线控制:< DF> Q2 = CX(PD-PC)其中:Q2表示气体通过气体再循环管线返回到真空室的recirclllation流速; PC表示在真空室中的压力; 的Pd表示在气体再循环管线的上游侧的压力; 和C表示气体再循环管线的电导。

    A method for the heat treatment of group II-VI semiconductors
    6.
    发明公开
    A method for the heat treatment of group II-VI semiconductors 失效
    Verfahren zurWärmebehandlungvon II-VI Halbleitern

    公开(公告)号:EP0856880A2

    公开(公告)日:1998-08-05

    申请号:EP98300456.5

    申请日:1998-01-22

    IPC分类号: H01L21/385

    摘要: A method for the heat treatment of a Group II-VI semiconductor, which comprises forming a film of a Group III element as a donor impurity or a Group III element-containing compound on a surface of a single crystal of a Group II-VI semiconductor, then charging said single crystal and the Group II element constituting the single crystal in a closed vessel and heating them in such a manner that they are not contacted with each other.

    摘要翻译: 一种II-VI族半导体的热处理方法,其包括在第II-VI族半导体的单晶的表面上形成作为施主杂质的III族元素的膜或含有III族元素的化合物 然后将构成单晶的单晶和II族元素装入密闭容器中,并以不使它们彼此接触的方式进行加热。

    CVD processing chamber
    7.
    发明公开
    CVD processing chamber 失效
    KammerfürCVD Behandlungen

    公开(公告)号:EP0714998A3

    公开(公告)日:1996-12-04

    申请号:EP95117865.6

    申请日:1995-11-13

    IPC分类号: C23C16/44 H01L21/00

    摘要: A process chamber 133 is disclosed which provides a 360° circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly 135. The substrate faces a one-piece gas distribution faceplate 122 being connected to an RF power supply outside the vacuum environment of the processing chamber 133. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces 265. All process chamber wall surfaces 265 facing the region 141 where plasma will be present during processing (except the gas distribution faceplate) are ceramic 234, 236 and therefore highly resistant to corrosion. The pedestal 136, an un-anodized metal, is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body 226 is contained within the wall of the processing chamber 133 helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber 133 if allowed to migrate back to it through the vacuum piping.

    摘要翻译: 公开了一种装置,其包括用于处理基板的真空处理室(133) 用于在所述真空处理室(133)中的衬底处理位置(141)处支撑衬底的衬底支撑件(135); 用于向所述处理室(133)供应处理气体用于处理所述衬底的气体入口; 其中所述腔室(133)包括在所述内腔表面(265)中的与所述腔室(133)的壁中的真空管道(222)连通的一个或多个开口(131),所述真空管道(222)连接到 真空系统,其中所述内室表面(265)包括邻近所述衬底处理位置(141)的陶瓷衬里(234,236),以防止所述处理室(133)的与所述衬底加工位置相邻的所述主体(134)的周壁 处理位置(141)在处理期间直接暴露于存在于所述衬底处理位置(141)处的等离子体。

    GaAs mesfets with enhanced schottky barrier
    9.
    发明公开
    GaAs mesfets with enhanced schottky barrier 失效
    砷化镓信号与增强肖特基势垒

    公开(公告)号:EP0517443A2

    公开(公告)日:1992-12-09

    申请号:EP92304899.5

    申请日:1992-05-29

    申请人: AT&T Corp.

    摘要: The Schottky barrier gate (8) contact is produced by wet-chemical removal of native oxide in a sealed inert gas ambient and blow-drying the wet-etched surface with the inert gas prior to deposition of gate electrode metal on GaAs (4) by electron beam evaporation in an inert gas ambient. Use of Pt, the gate contact metal results in a Schottky barrier height of 0.98 eV for Pt on n-type GaAs (0.78 eV). To lower the sheet resistivity of the gate contact, Pt is preferably used as a multi-layer contact in combination with metals having lower sheet resistivity, e.g. Pt Au belayer.

    摘要翻译: 肖特基势垒栅极(8)接触通过在密封的惰性气体环境中湿法化学除去天然氧化物并且在将栅极电极金属沉积在GaAs(4)上之前用惰性气体吹干湿法蚀刻的表面来产生 电子束在惰性气体环境中蒸发。 使用Pt,栅极接触金属导致n型GaAs(0.78eV)上Pt的肖特基势垒高度为0.98eV。 为了降低栅极触点的薄层电阻率,优选将Pt用作多层触点与具有较低薄层电阻率的金属(例如, Pt Au保护层。

    CCD solid state image sensing device
    10.
    发明公开
    CCD solid state image sensing device 失效
    CCDFestkörper-Bildaufnahmevorrichtung。

    公开(公告)号:EP0503666A2

    公开(公告)日:1992-09-16

    申请号:EP92104400.4

    申请日:1992-03-13

    申请人: SONY CORPORATION

    摘要: A CCD solid state image sensing device (A) is described in which a photosensitive section is constructed by a photodiode formed by a PN-junction between a first P-type well region (2) and an N-type impurity diffusion region (3) formed on an N-type silicon substrate (1). The N-type impurity diffusion region (3) is formed by ion implantation of a single substance of arsenic (As). With this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with known image sensing screens, can be reduced. The n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing this CCD solid state image sensing device also is disclosed.

    摘要翻译: 描述了一种CCD固态图像感测装置(A),其中感光部分由由第一P型阱区域(2)和N型杂质扩散区域(3)之间的PN结形成的光电二极管构成, 形成在N型硅衬底(1)上。 通过离子注入砷(As)的单一物质形成N型杂质扩散区(3)。 利用该CCD固态图像感测装置,可以减少图像感测屏幕上的明亮缺陷,这是已知的图像感测屏幕遇到的缺陷之一。 构成PN结的n型杂质扩散区的尺寸可以减小,并且可以使CCD固态图像感测装置本身尺寸更小。 此外,还公开了制造该CCD固体摄像装置的方法。