摘要:
The present invention is directed toward a method for reducing pattern distortions in imprinting layers by reducing gas pockets present in a layer of viscous liquid deposited on a substrate. To that end, the method includes varying the transport of gases disposed proximate to the viscous liquid. Specifically, the atmosphere proximate to the substrate wherein a pattern is to be recorded is saturated with gases that are either highly soluble, highly diffusive, or both with respect to the viscous liquid being deposited. Additionally, or in lieu of saturating the atmosphere, the pressure of the atmosphere may be reduced.
摘要:
A method of fabricating a semiconductor device, capable of improving the in-plane uniformity of a silicon nitride film or a silicon oxynitride film to be formed, and increasing a production efficiency at the film forming. The method comprises the steps of forming on a silicon substrate a first film consisting of a silicon oxide film or a silicon oxynitride film, forming a second film consisting of one tetrachlorosilane monomolecular layer, and nitriding the second film to form a third film consisting of one silicon nitride monomolecular layer. The second film forming step and the third film forming steps are repeated specified number of times to form a silicon nitride film of a specified film thickness. A fabrication device comprises a plurality of silicon substrates disposed on shelf-shaped wafer ports, a process gas being supplied toward above a reaction pipe from a process gas supply pipe.
摘要:
A method for producing a plasma silicon nitride series film with a small heat load having a low hydrogen concentration is provided. The method is for producing a silicon nitride series film on a material to be treated using a plasma CVD apparatus having a reaction chamber evacuated to vacuum. The method comprises the steps of introducing a monosilane gas (SiH 4 ) and a nitrogen gas (N 2 ) as raw material gases into the reaction chamber at prescribed flow rates, and heating the material to be treated to a prescribed temperature. At this time, it is characterized in that the flow rate of the nitrogen gas is at least 100 times the flow rate of the monosilane gas.
摘要:
A gas recirculation flow control method and apparatus for use in an evacuation system having a vacuum chamber into which a gas is introduced, a first vacuum pump for exhausting the gas from the vacuum chamber and reducing the pressure in the vacuum chamber to a desired pressure, a second vacuum pump for performing evacuation to lower the back pressure of the first vacuum pump below an allowable back pressure, and a gas recirculation line for returning a part of gas exhausted from the first vacuum pump to the vacuum chamber. The recirculation flow rate Q 2 of the gas returning to the vacuum chamber through the gas recirculation line is controlled by adjusting the differential pressure Pd-Pc in the gas recirculation line by varying the effective pumping speed of the second vacuum pump using the following relationship: Q 2 =C×(Pd-Pc) where: Q 2 denotes the recirclllation flow rate of the gas returning to the vacuum chamber through the gas recirculation line; Pc denotes the pressure in the vacuum chamber; Pd denotes the pressure in the upstream side of the gas recirculation line; and C denotes the conductance of the gas recirculation line.
摘要:
A method for the heat treatment of a Group II-VI semiconductor, which comprises forming a film of a Group III element as a donor impurity or a Group III element-containing compound on a surface of a single crystal of a Group II-VI semiconductor, then charging said single crystal and the Group II element constituting the single crystal in a closed vessel and heating them in such a manner that they are not contacted with each other.
摘要:
A process chamber 133 is disclosed which provides a 360° circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly 135. The substrate faces a one-piece gas distribution faceplate 122 being connected to an RF power supply outside the vacuum environment of the processing chamber 133. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces 265. All process chamber wall surfaces 265 facing the region 141 where plasma will be present during processing (except the gas distribution faceplate) are ceramic 234, 236 and therefore highly resistant to corrosion. The pedestal 136, an un-anodized metal, is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body 226 is contained within the wall of the processing chamber 133 helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber 133 if allowed to migrate back to it through the vacuum piping.
摘要:
The Schottky barrier gate (8) contact is produced by wet-chemical removal of native oxide in a sealed inert gas ambient and blow-drying the wet-etched surface with the inert gas prior to deposition of gate electrode metal on GaAs (4) by electron beam evaporation in an inert gas ambient. Use of Pt, the gate contact metal results in a Schottky barrier height of 0.98 eV for Pt on n-type GaAs (0.78 eV). To lower the sheet resistivity of the gate contact, Pt is preferably used as a multi-layer contact in combination with metals having lower sheet resistivity, e.g. Pt Au belayer.
摘要:
A CCD solid state image sensing device (A) is described in which a photosensitive section is constructed by a photodiode formed by a PN-junction between a first P-type well region (2) and an N-type impurity diffusion region (3) formed on an N-type silicon substrate (1). The N-type impurity diffusion region (3) is formed by ion implantation of a single substance of arsenic (As). With this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with known image sensing screens, can be reduced. The n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing this CCD solid state image sensing device also is disclosed.