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公开(公告)号：EP0503815A3
公开(公告)日：1993-12-15
申请号：EP92301793.3
申请日：1992-03-03
IPC分类号： H01L21/28 , H01L21/336 , H01L21/316
CPC分类号： H01L21/28211 , H01L21/3225
摘要： A semiconductor device of the MOS construction such that a gate oxide film of the device has a gate area in the range of from 5 to 15 mm² and a thickness in the range of from 15 to 40 nm and the oxide film dielectric breakdown voltage is not less than 8 MV/cm when a gate current caused to flow in response to application of a direct-current voltage between a phosphorus-doped polysilicon electrode formed on the oxide film and a silicon single crystal substrate increases past 1µ A/mm² as current density is obtained by using a silicon wafer substrate having an oxygen concentration of not more than 1 x 10¹⁸ atoms/cm³.
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公开(公告)号：EP0503816B1
公开(公告)日：1996-09-18
申请号：EP92301795.8
申请日：1992-03-03
CPC分类号： C30B15/00 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/3225
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公开(公告)号：EP0487302B1
公开(公告)日：1996-06-05
申请号：EP91310648.0
申请日：1991-11-19
CPC分类号： G01N27/92 , G01R31/2831 , Y10S148/06 , Y10S148/162
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公开(公告)号：EP0504837A3
公开(公告)日：1993-02-17
申请号：EP92104679.3
申请日：1992-03-18
发明人： Oda, Tetsuhiro , Fusegawa, Izumi , Yamagishi, Hirotoshi , Iwasaki, Atsushi , Maeda, Akiho , Takeyasu, Shinobu , Fujimaki, Nobuyoshi , Karasawa, Yukio
CPC分类号： C30B29/06 , C30B15/14 , Y10S117/90 , Y10T117/1068
摘要： A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield, which comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal (28) having a temperature in excess of 1150°C is spaced upwardly from a surface of silicon melt (14) by a distance greater than 280 mm; and pulling the growing silicon single crystal (28) upward while maintaining the pulling conditions. The silicon single crystal produced by this method has an excellent oxide film dielectric breakdown strength. An apparatus (2) for carrying out the method is also disclosed.
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5.发明公开Method and apparatus for producing silicon single crystal 失效Herstellung eines Silizium-Einkristalls的Verfahren und Vorrichtungfürdie。
公开(公告)号：EP0504837A2
公开(公告)日：1992-09-23
申请号：EP92104679.3
申请日：1992-03-18
发明人： Oda, Tetsuhiro , Fusegawa, Izumi , Yamagishi, Hirotoshi , Iwasaki, Atsushi , Maeda, Akiho , Takeyasu, Shinobu , Fujimaki, Nobuyoshi , Karasawa, Yukio
CPC分类号： C30B29/06 , C30B15/14 , Y10S117/90 , Y10T117/1068
摘要： A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield, which comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal (28) having a temperature in excess of 1150°C is spaced upwardly from a surface of silicon melt (14) by a distance greater than 280 mm; and pulling the growing silicon single crystal (28) upward while maintaining the pulling conditions. The silicon single crystal produced by this method has an excellent oxide film dielectric breakdown strength. An apparatus (2) for carrying out the method is also disclosed.
摘要翻译： 稳定高效地生产切克劳斯基生长的硅单晶的方法，其生产率高，其包括如下步骤：设定拉伸条件，使得至少一部分温度超过1150℃的硅单晶（28）的至少一部分 C从硅熔体（14）的表面向上间隔大于280mm的距离; 并且在保持拉伸条件的同时向上拉动生长的硅单晶（28）。 通过该方法制造的硅单晶具有优异的氧化膜介电击穿强度。 还公开了一种用于执行该方法的装置（2）。
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公开(公告)号：EP0503815A2
公开(公告)日：1992-09-16
申请号：EP92301793.3
申请日：1992-03-03
IPC分类号： H01L21/28 , H01L21/336 , H01L21/316
CPC分类号： H01L21/28211 , H01L21/3225
摘要： A semiconductor device of the MOS construction such that a gate oxide film of the device has a gate area in the range of from 5 to 15 mm² and a thickness in the range of from 15 to 40 nm and the oxide film dielectric breakdown voltage is not less than 8 MV/cm when a gate current caused to flow in response to application of a direct-current voltage between a phosphorus-doped polysilicon electrode formed on the oxide film and a silicon single crystal substrate increases past 1µ A/mm² as current density is obtained by using a silicon wafer substrate having an oxygen concentration of not more than 1 x 10¹⁸ atoms/cm³.
摘要翻译： MOS结构的半导体器件使得器件的栅极氧化膜具有在5至15mm 2范围内的栅极区域和15至40nm范围内的厚度以及氧化膜介电击穿 当在形成在氧化膜上的磷掺杂多晶硅电极和硅单晶衬底之间施加直流电压时引起的栅极电流流动的电压不低于8MV / cm，增加了1μA/ 通过使用氧浓度不大于1×10 8原子/ cm 3的硅晶片衬底获得电流密度。
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公开(公告)号：EP0487302A3
公开(公告)日：1993-11-18
申请号：EP91310648.0
申请日：1991-11-19
CPC分类号： G01N27/92 , G01R31/2831 , Y10S148/06 , Y10S148/162
摘要： The evaluation of the oxide film dielectric breakdown voltage of a silicon semiconductor single crystal is caried out by cutting a wafer out of the single crystal rod, etching the surface of the wafer with the mixed solution of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, then etching the surface of the wafer with the mixed solution of K₂Cr₂O₇, hydrofluoric acid, and water therby inducing occurrence of pits and scale-like patterns on the surface, determining the density of the scale-like patterns, and computing the oxide film dielectric breakdown voltage by making use of the correlating between the density of scale-like patterns and the oxide film dielectric breakdown voltage. This fact established the method of this invention to be capable of effecting an evaluation equivalent to the evaluation of the oxide film dielectric breakdown voltage of a PW wafer prepared from the single crystal rod.
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8.发明公开
公开(公告)号：EP0503814A1
公开(公告)日：1992-09-16
申请号：EP92301792.5
申请日：1992-03-03
摘要： Quick and inexpensive determination of an aggregate of point defects in a grown silicon semiconductor single crystal bar is accomplished by a method which comprises cutting a wafer from a freshly grown silicon single crystal bar, etching the surface of this wafer with the mixture of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, treating the wafer with the mixture of K₂Cr₂O₇, hydrofluoric acid, and water thereby giving rise to pits 2 and ripple patterns 1 therein, determining the density of the pits 2 and that of the ripple patterns 1, and rating the aggregate of point defects by virtue of the correlation between the densities of the pits 1 and the ripple patterns 1 and the aggregate of point defects.
摘要翻译： 生长的硅半导体单晶棒中的点缺陷聚集体的快速且廉价的确定是通过一种方法实现的，该方法包括从新生成的硅单晶棒切割晶片，用氢氟酸和 硝酸，从而减轻晶片的应变，用K2Cr2O7，氢氟酸和水的混合物处理晶片，从而在其中产生凹坑2和波纹图案1，确定凹坑2的密度和波纹图案1的密度， 并且通过凹坑1的密度和波纹图案1和点缺陷的聚集之间的相关性来评估点缺陷的总和。
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公开(公告)号：EP0487302A2
公开(公告)日：1992-05-27
申请号：EP91310648.0
申请日：1991-11-19
CPC分类号： G01N27/92 , G01R31/2831 , Y10S148/06 , Y10S148/162
摘要： The evaluation of the oxide film dielectric breakdown voltage of a silicon semiconductor single crystal is caried out by cutting a wafer out of the single crystal rod, etching the surface of the wafer with the mixed solution of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, then etching the surface of the wafer with the mixed solution of K₂Cr₂O₇, hydrofluoric acid, and water therby inducing occurrence of pits and scale-like patterns on the surface, determining the density of the scale-like patterns, and computing the oxide film dielectric breakdown voltage by making use of the correlating between the density of scale-like patterns and the oxide film dielectric breakdown voltage. This fact established the method of this invention to be capable of effecting an evaluation equivalent to the evaluation of the oxide film dielectric breakdown voltage of a PW wafer prepared from the single crystal rod.
摘要翻译： 通过从单晶棒切割晶片来实现对硅半导体单晶的氧化膜介电击穿电压的评价，用氢氟酸和硝酸的混合溶液蚀刻晶片的表面，从而使晶片 然后用K2Cr2O7，氢氟酸和水的混合溶液蚀刻晶片的表面，从而在表面上引起凹坑和鳞片状图案的发生，确定鳞片状图案的密度，并计算氧化膜 通过利用鳞片状图案的密度和氧化膜介电击穿电压之间的相关性来获得介电击穿电压。 这个事实确定了本发明的方法能够进行与从单晶棒制备的PW晶片的氧化膜介电击穿电压的评估相当的评估。
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公开(公告)号：EP0503814B1
公开(公告)日：1998-01-14
申请号：EP92301792.5
申请日：1992-03-03
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