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公开(公告)号：EP1801647A4
公开(公告)日：2008-01-23
申请号：EP05782284
申请日：2005-09-08
发明人： YOSHIKAWA HIROKI , INAZUKI YUKIO , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , IWAKATA MASAHIDE , TAKAGI MIKIO , FUKUSHIMA YUICHI , SAGA TADASHI
IPC分类号： G03F1/32 , G03F1/68 , G03F1/80 , H01L21/027
摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent board. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon or a transition metal as main ingredient, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
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公开(公告)号：EP1811335A4
公开(公告)日：2008-12-17
申请号：EP05770691
申请日：2005-08-10
发明人： YOSHIKAWA HIROKI , INAZUKI YUKIO , KINASE YOSHINORI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , IWAKATA MASAHIDE , TAKAGI MIKIO , FUKUSHIMA YUICHI , SAGA TADASHI
IPC分类号： C23F4/00 , G03F1/48 , G03F1/50 , G03F1/54 , H01L21/027
摘要： A metal film is formed on one major surface of a photomask substrate (11) as a light-blocking layer (12). This metal film is not substantially etched by oxygen-containing chlorine-based dry etching ((Cl + O)-type dry etching), but can be etched by non-oxygen containing chlorine-based dry etching (Cl-type dry etching) and fluorine-based dry etching (F-type dry etching). A metal compound film is formed on the light-blocking layer (12) as an antireflective layer (13). This metal compound film is not substantially etched by non-oxygen containing chlorine-based dry etching (Cl-type), but can be etched by at least one of oxygen-containing chlorine-based dry etching ((Cl + O)-type) and fluorine-based dry etching (F-type).
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