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1.发明公开
公开(公告)号：EP3968088A3
公开(公告)日：2022-06-15
申请号：EP21195102.5
申请日：2021-09-06
摘要： A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion and a protection layer containing Ru and including a lower layer composed of Ru, and an upper layer composed of a material containing Ru and at least one selected from the group consisting of metals other than Ru, and metalloids.
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公开(公告)号：EP1806767B1
公开(公告)日：2018-07-04
申请号：EP05795225.1
申请日：2005-10-21
申请人： Nikon Corporation
IPC分类号： G03F7/20 , H01L21/00 , G03F1/24 , G03F1/48 , G03F1/62 , H01L21/67 , H01L21/677 , B82Y10/00 , B82Y40/00
CPC分类号： G03F1/62 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/48 , G03F1/66 , G03F7/70733 , G03F7/70741 , G03F7/7075 , G03F7/70908 , G03F7/70916 , G03F7/70983 , H01L21/67196 , H01L21/67225 , H01L21/67742
摘要： In a substrate transfer apparatus, an inner surface of a protective cover is covered with a cover protection means when the substrate is being used. Therefore, the inner surface of the protective cover can be prevented from being contaminated when the substrate is being used. Further, the protective cover is grounded at a standby position. Therefore, the protective cover is prevented from being electrostatically charged and adhesion of particles on the protective cover is reduced. In the substrate transfer method, the protective cover is permitted to wait in a condition where the inner surface of the protective cover is being covered when the substrate is being used. Therefore, the inner surface of the protective cover can be prevented from being contaminated. In an exposure apparatus, since the substrate transfer apparatus is used, a product can be obtained at a high yield by using the less contaminated substrate.
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3.发明公开
公开(公告)号：EP3167474A4
公开(公告)日：2018-04-18
申请号：EP15819522
申请日：2015-07-03
IPC分类号： H01L21/027 , C23C14/06 , C23C14/14 , G02B1/14 , G02B5/08 , G03F1/24 , G03F1/48 , G03F1/52 , G03F7/20 , G21K1/06
CPC分类号： G03F7/702 , C23C14/0605 , C23C14/0635 , C23C14/14 , C23C16/44 , G02B1/14 , G02B5/085 , G02B5/0891 , G03F1/24 , G03F1/48 , G03F1/52 , G03F7/70033 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062 , H01J37/32798 , H01J37/3429
摘要： An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
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公开(公告)号：EP1811335A4
公开(公告)日：2008-12-17
申请号：EP05770691
申请日：2005-08-10
发明人： YOSHIKAWA HIROKI , INAZUKI YUKIO , KINASE YOSHINORI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , IWAKATA MASAHIDE , TAKAGI MIKIO , FUKUSHIMA YUICHI , SAGA TADASHI
IPC分类号： C23F4/00 , G03F1/48 , G03F1/50 , G03F1/54 , H01L21/027
摘要： A metal film is formed on one major surface of a photomask substrate (11) as a light-blocking layer (12). This metal film is not substantially etched by oxygen-containing chlorine-based dry etching ((Cl + O)-type dry etching), but can be etched by non-oxygen containing chlorine-based dry etching (Cl-type dry etching) and fluorine-based dry etching (F-type dry etching). A metal compound film is formed on the light-blocking layer (12) as an antireflective layer (13). This metal compound film is not substantially etched by non-oxygen containing chlorine-based dry etching (Cl-type), but can be etched by at least one of oxygen-containing chlorine-based dry etching ((Cl + O)-type) and fluorine-based dry etching (F-type).
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6.发明公开
公开(公告)号：EP4212956A1
公开(公告)日：2023-07-19
申请号：EP21866769.9
申请日：2021-09-07
发明人： KUROKI, Kyoko , MATSUI, Kazuaki , KOJIMA, Yosuke
摘要： There are provided a phase shift mask blank capable of sufficiently suppressing the generation of a haze on a mask, a phase shift mask with few haze defects, and a method for manufacturing the phase shift mask. A phase shift mask blank (10) according to this embodiment is a phase shift mask blank used for producing a phase shift mask to which an exposure light with a wavelength of 200 nm or less is applied, and the phase shift mask blank (10) includes: a substrate (11); and a phase shift film (14) formed on the substrate (11), in which the phase shift film (14) includes a phase layer (12) capable of adjusting each of the phase and the transmittance by a predetermined amount with respect to a transmitting exposure light and a protective layer (13) formed on the phase layer (12) and preventing gas permeation into the phase layer (12), when the film thickness of the phase layer (12) is defined as d1 and the film thickness of the protective layer (13) is defined as d2, the film thickness (d1) of the phase layer (12) is larger than the film thickness (d2) of the protective layer (13) and the film thickness (d2) of the protective layer (13) is 15 nm or less.
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公开(公告)号：EP3410213B1
公开(公告)日：2021-05-26
申请号：EP17744618.4
申请日：2017-01-31
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公开(公告)号：EP3486721A1
公开(公告)日：2019-05-22
申请号：EP17202392.1
申请日：2017-11-17
申请人： IMEC vzw
发明人： LEE, Jae Uk , KIM, Ryan Ryoung han
摘要： A mask for extreme-UV lithography, of attenuated phase shift mask type, comprises a substrate (1), a reflecting structure (2) and attenuating and phase-shifting portions (3). An additional capping layer (4) covers at least sidewalls (SW) of the portions (3). It allows reducing a reflection of an incident beam of extreme-UV on the sidewalls of the portions, so that reflection peaks on opposite sides of each attenuating and phase-shifting portion are substantially identical. An additional protection function for the mask during cleaning processes is also provided by the capping layer.
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公开(公告)号：EP4443235A2
公开(公告)日：2024-10-09
申请号：EP24164620.7
申请日：2024-03-19
发明人： INAZUKI, Yukio , KOSAKA, Takuro , OGOSE, Taiga , MIMURA, Shohei
摘要： In a reflective mask blank including a substrate, a multilayer reflection film, a protection film, an absorber film and a hard mask film, the protection film is composed of a material containing ruthenium (Ru), the absorber film consists of a first layer and a second layer, or a first layer, a second layer and a third layer, the first layer has a composition containing tantalum (Ta) and being free of nitrogen (N), the second layer has a composition containing tantalum (Ta) and nitrogen (N), the third layer has a composition containing tantalum (Ta), nitrogen (N) and oxygen (O), and the hard mask film is composed of a material containing chromium (Cr).
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公开(公告)号：EP4379463A1
公开(公告)日：2024-06-05
申请号：EP22866663.2
申请日：2022-09-07
发明人： CAI, Yongan
CPC分类号： C23C14/04 , C25D5/02 , G03F1/00 , G03F1/48 , G03F7/00 , H01L21/027 , H01L31/0224 , H01L31/18
摘要： The present application provides a thin film mask including a first layer and a second layer; the first layer and the second layer are arranged in layer configuration; the second layer includes an adhesive film; under irradiation of an ultraviolet light source and with a thickness of the first layer being 200 µm or less, an absorption coefficient of the first layer is ≥ 20%, wherein a wavelength of the ultraviolet light source is 355 ± 15 nm; or under irradiation of a green light source and with the thickness of the first layer being 200 µm or less, the absorption coefficient of the first layer is ≥ 20%, wherein a wavelength of the green light source is 530 ± 15 nm; or under irradiation of an infrared light source and with the thickness of the first layer being 200 µm or less, the absorption coefficient of the first layer is ≥ 20%, wherein a wavelength of the infrared light source is 1045 ± 20 nm; and a visible light transmittance of the first layer is ≤ 90%. The optical properties are utilized by the thin film mask provided by the present application, less power for the light source is required and the cost can be saved comparing with a common thin film. Further, by the patterning content formed by a light source with low power consumption, and the cost of the adhesive film is low. A complicated process is not needed to be matched with to achieve the patterning process, and cost reduction and efficiency increase are achieved.
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