公开(公告)号：EP0244567A2

公开(公告)日：1987-11-11

申请号：EP87101903.0

申请日：1987-02-11

Applicant: SHIPLEY COMPANY INC.

Inventor： Vidusek, David A. ,  Legenza, Michael ,  Vincent, Jeffery L.

IPC: G03F7/26 ,  G03F7/02

CPC classification number: G03F7/322 ,  G03F7/094

Abstract: The invention is for a developer for a bilayer photoresist film comprising a first relatively thick layer of a polyglutarimide and a second relatively thin layer of a diazo sensitized novolak resin. The developer is an aqueous solution of a tetra alkyl ammonium hydroxide where at least two of the alkyl groups have two or more carbon atoms. The developer of the invention permits development of the bottom resist layer without erosion of the top resist layer.

Abstract translation: 本发明涉及用于双层光致抗蚀剂膜的显影剂，其包含第一相对较厚的聚戊二酰亚胺层和第二相对较薄的重氮敏感酚醛清漆树脂层。 显影剂是四烷基氢氧化铵的水溶液，其中至少两个烷基具有两个或更多个碳原子。 本发明的显影剂允许底层抗蚀剂层的开发而不会侵蚀顶层抗蚀剂层。

公开(公告)号：EP0244567A3

公开(公告)日：1990-03-21

申请号：EP87101903.0

申请日：1987-02-11

Applicant: SHIPLEY COMPANY INC.

Inventor： Vidusek, David A. ,  Legenza, Michael ,  Vincent, Jeffery L.

IPC: G03F7/26 ,  G03F7/02

CPC classification number: G03F7/322 ,  G03F7/094

Abstract: The invention is for a developer for a bilayer photoresist film comprising a first relatively thick layer of a polyglutarimide and a second relatively thin layer of a diazo sensitized novolak resin. The developer is an aqueous solution of a tetra alkyl ammonium hydroxide where at least two of the alkyl groups have two or more carbon atoms. The developer of the invention permits development of the bottom resist layer without erosion of the top resist layer.

Abstract translation: 本发明是用于双层光致抗蚀剂膜的显影剂，其包含聚戊二酰亚胺的第一较厚层和重氮敏化酚醛清漆树脂的第二较薄层。 显影剂是四烷基氢氧化铵的水溶液，其中至少两个烷基具有两个或更多个碳原子。 本发明的显影剂允许显影底部抗蚀剂层而不会侵蚀顶部抗蚀剂层。