公开(公告)号：EP0662247B1

公开(公告)日：1999-03-10

申请号：EP93918951.0

申请日：1993-09-07

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： KARG, Franz ,  PROBST, Volker

IPC分类号： H01L31/18 ,  H01L31/032

CPC分类号： H01L31/0322 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0749 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521 ,  Y10S438/971

摘要： In order to produce a polycrystalline, single-phase linking semiconductor layer made of chalkopyrite type ABC2, a laminated structure comprising several layers is precipitated onto a substrate. The sandwich structure contains components in elemental form, as interelemental compound or as alloy, with a stoichiometric excess of component C. In a rapid annealing process at a heating rate of at least 10 C per second up to a process temperature of at least 350 C, the laminated structure is converted already after a few seconds into the linking semiconductor ABC2. By encapsulating the laminated structure, gas exchange is limited, preventing the most volatile components from evaporating. High-efficiency solar cells can be produced with this semiconductor.

公开(公告)号：EP0721667A1

公开(公告)日：1996-07-17

申请号：EP94928257.0

申请日：1994-09-28

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： PROBST, Volker ,  KARG, Franz

IPC分类号： H01L31

CPC分类号： H01L31/0749 ,  H01L31/022425 ,  H01L31/0322 ,  Y02E10/541

摘要： A solar cell has a chalcopyrite absorber layer applied on the substrate by means of an adhesive layer made of chromium, titanium, tantalum or titanium nitride.

摘要翻译： 太阳能电池具有通过由铬，钛，钽或氮化钛制成的粘合层施加在基底上的黄铜矿吸收层。

公开(公告)号：EP0710402A1

公开(公告)日：1996-05-08

申请号：EP94920402.0

申请日：1994-07-12

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： KARG, Franz ,  RIEDL, Wolfgang ,  EINZINGER, Richard ,  AULICH, Hubert

IPC分类号： H01L31 ,  B23K26 ,  H01L21 ,  H01L27

CPC分类号： H01L31/046 ,  B23K26/0676 ,  B23K26/40 ,  B23K2203/172 ,  H01L31/0322 ,  H01L31/0463 ,  H01L31/204 ,  Y02E10/541 ,  Y02P70/521

摘要： In order to structure thin film solar cells with a transparent substrate and a transparent front electrode, the active semiconductor layer and the backing electrode are lifted off in a single step to produce the required structure pits. For that purpose, the energy required is irradiated by laser pulses through the substrate and the front electrode into the semiconductor material. The semiconductor material is thus blasted off the front electrode in the irradiated area without leaving any residues. In order to wire adjacent solar cell strips, the strips are further irradiated directly next to the generated structure pits. By reversing the phase of the semiconductor layer, low impedance areas are generated that connect the backing electrode of a first strip-shaped solar cell to the front electrode of a second strip-shaped solar cell.

公开(公告)号：EP0662247A1

公开(公告)日：1995-07-12

申请号：EP93918951.0

申请日：1993-09-07

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： KARG, Franz ,  PROBST, Volker

IPC分类号： H01L31 ,  H01L21

CPC分类号： H01L31/0322 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0749 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521 ,  Y10S438/971

摘要： In order to produce a polycrystalline, single-phase linking semiconductor layer made of chalkopyrite type ABC2, a laminated structure comprising several layers is precipitated onto a substrate. The sandwich structure contains components in elemental form, as interelemental compound or as alloy, with a stoichiometric excess of component C. In a rapid annealing process at a heating rate of at least 10 °C per second up to a process temperature of at least 350 °C, the laminated structure is converted already after a few seconds into the linking semiconductor ABC2. By encapsulating the laminated structure, gas exchange is limited, preventing the most volatile components from evaporating. High-efficiency solar cells can be produced with this semiconductor.