公开(公告)号：EP1843126A1

公开(公告)日：2007-10-10

申请号：EP05820171.6

申请日：2005-12-22

申请人： SII NanoTechnology Inc.

发明人： IKKU, Yutaka, SII Nanotechnology Inc. ,  ASAHATA, Tatsuya, SII Nanotechnology Inc. ,  SUZUKI, Hidekazu, SII Nanotechnology Inc.

IPC分类号： G01B15/02 ,  G01N23/20 ,  G01N23/225 ,  H01J37/28 ,  H01J37/30 ,  H01L21/66

CPC分类号： G01B15/02 ,  G01N23/225 ,  H01J2237/2814

摘要： In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied.
An electron beam 2b is irradiated, and a generated secondary electron 4 is detected by a secondary electron detector 6. A calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating means 11. A film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample 5.

摘要翻译： 在测量向薄膜样品照射电子束的薄膜样品的测量方法中，通过利用二次电子来检测所产生的二次电子和测量薄膜样品的膜厚度，其条件是测量膜厚度 准确地说，即使当照射的电子束的当前量变化时，也能够在短时间内容易地进行。 照射电子束2b，并且通过二次电子检测器6检测所产生的二次电子4.由在膜厚度测量区域检测到的二次电子量和在第二电子检测器检测到的二次电子量构成的计算值 通过第一计算装置11计算参考区域。可以从标准薄膜样品的校准数据和由样品5计算的计算值来计算膜厚度测量区域的膜厚度。

公开(公告)号：EP1811291A1

公开(公告)日：2007-07-25

申请号：EP05799314.9

申请日：2005-10-26

申请人： SII NanoTechnology Inc.

发明人： MATOBA, Yoshiki, SII Nanotechnology Inc. ,  FUKAI, Takayuki, SII Nanotechnology Inc. ,  TAKAHASHI, Masanori, SII Nanotechnology Inc. ,  IKKU, Yutaka, SII Nanotechnology Inc.

IPC分类号： G01N23/223

CPC分类号： G01N23/223 ,  G01N2223/076

摘要： A sample sealing vessel 8 includes a plurality of wall faces comprising a material for transmitting X-ray, an X-ray source 1 is arranged at a wall face 11 to irradiate primary X-ray, a face 12 different from the face irradiated with the primary X-ray is arranged to be opposed to an X-ray detector 10, and the primary X-ray from the X-ray source 1 is arranged to be able to irradiate the wall face 12 of the sample sealing vessel to which the X-ray detector 10 is opposed.

摘要翻译： 样品密封容器8包括多个壁面，其包括用于透射X射线的材料，X射线源1设置在壁面11处以照射主X射线，不同于被照射的X射线的面 初级X射线与X射线检测器10相对配置，来自X射线源1的主X射线被配置为能够照射样品密封容器的壁面12，X射线 射线检测器10相对。

公开(公告)号：EP1843126B1

公开(公告)日：2009-12-09

申请号：EP05820171.6

申请日：2005-12-22

申请人： SII NanoTechnology Inc.

发明人： IKKU, Yutaka, SII Nanotechnology Inc. ,  ASAHATA, Tatsuya, SII Nanotechnology Inc. ,  SUZUKI, Hidekazu, SII Nanotechnology Inc.

IPC分类号： G01B15/02 ,  G01N23/20 ,  G01N23/225 ,  H01J37/28 ,  H01J37/30 ,  H01L21/66

CPC分类号： G01B15/02 ,  G01N23/225 ,  H01J2237/2814