公开(公告)号：EP3073587A4

公开(公告)日：2017-07-26

申请号：EP14864863

申请日：2014-11-06

申请人： SONY CORP

发明人： WADA SHINICHI ,  KURAMOTO MASARU ,  WATANABE HIDEKI

IPC分类号： H01S5/028 ,  H01S5/042 ,  H01S5/06 ,  H01S5/065 ,  H01S5/14 ,  H01S5/22 ,  H01S5/343

CPC分类号： H01S5/34333 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/065 ,  H01S5/141 ,  H01S5/2214

摘要： A semiconductor laser element includes a stacked structure body, a second electrode 62, and a first electrode 61; a ridge stripe structure 71 formed of at least part of the stacked structure body is formed; a side structure body 72 formed of the stacked structure body is formed on both sides of the ridge stripe structure 71; the second electrode 62 is separated into a first portion for sending a direct current to the first electrode via a light emitting region and a second portion 62B for applying an electric field to a saturable absorption region; a protection electrode 81 is formed on a portion adjacent to the second portion 62B of the second electrode of at least one side structure body 72; and an insulating layer 56 made of an oxide insulating material is formed to extend from on a portion of the ridge stripe structure 71 to on a portion of the side structure body 72, on which portions neither the second electrode nor the protection electrode 81 is formed.

摘要翻译： 半导体激光元件包括层叠结构体，第二电极62以及第一电极61， 形成由至少一部分叠层结构体形成的脊条结构71; 在脊条形结构71的两侧形成由叠层结构体形成的侧面结构体72， 第二电极62被分成用于经由发光区域向第一电极发送直流电的第一部分和用于向可饱和吸收区域施加电场的第二部分62B; 保护电极81形成在与至少一个侧面结构体72的第二电极的第二部分62B相邻的部分上; 并且由氧化物绝缘材料制成的绝缘层56形成为从脊条形结构71的一部分延伸到侧结构体72的未形成第二电极和保护电极81的部分上的部分 。