公开(公告)号：EP2460241B1

公开(公告)日：2013-08-07

申请号：EP10740507.8

申请日：2010-06-28

申请人： OSRAM Opto Semiconductors GmbH

发明人： LELL, Alfred ,  RAMMELSBERGER, Stefanie

IPC分类号： H01S5/40 ,  H01S5/22

CPC分类号： H01S5/4031 ,  H01S5/2036 ,  H01S5/2086 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/4081

公开(公告)号：EP2224558A4

公开(公告)日：2013-05-22

申请号：EP08847356

申请日：2008-10-31

申请人： NICHIA CORP

发明人： SONOBE SHINYA ,  MASUI SHINGO

IPC分类号： H01S5/22 ,  H01S5/028 ,  H01S5/042 ,  H01S5/16 ,  H01S5/20 ,  H01S5/32 ,  H01S5/343

CPC分类号： H01S5/168 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0283 ,  H01S5/0425 ,  H01S5/166 ,  H01S5/2086 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/3214 ,  H01S5/34333 ,  H01S2301/176 ,  H01S2301/18 ,  H01S2304/04

公开(公告)号：EP2529453A1

公开(公告)日：2012-12-05

申请号：EP10844886.1

申请日：2010-01-29

申请人： Hewlett Packard Development Company, L.P.

发明人： FATTAL, David, A. ,  BEAUSOLEIL, Raymond, G. ,  TAN, Michael, Renne Ty

IPC分类号： H01S5/18 ,  H01S5/00

CPC分类号： H01S5/18363 ,  H01S5/105 ,  H01S5/18308 ,  H01S5/18355 ,  H01S5/18361 ,  H01S5/18388 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/2214 ,  H01S2301/18

摘要： Various embodiments of the present invention are directed to surface-emitting lasers with the cavity including at least one single-layer, non-periodic, sub-wavelength grating, in one embodiment, a surface-emitting laser comprises a grating layer (112) configured with a non-periodic, sub-wavelength grating (122), a reflective layer, and a light-emitting layer (102) disposed between the grating layer and the reflector. The non-periodic, sub-wavelength grating is configured with a grating pattern that controls the shape of one or more internal cavity modes, and controls the shape of one or more external transverse modes emitted from the surface-emitting laser.

公开(公告)号：EP2242153B1

公开(公告)日：2012-02-29

申请号：EP10167736.7

申请日：2008-03-07

申请人： Nippon Telegraph And Telephone Corporation

发明人： Fujiwara, Naoki ,  Ishii, Hiroyuki ,  Oohashi, Hiromi ,  Okamoto, Hiroshi

IPC分类号： H01S5/062 ,  H01S5/125

CPC分类号： H01S5/06256 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/024 ,  H01S5/02407 ,  H01S5/02461 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/0617 ,  H01S5/06808 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/34306 ,  H01S5/4087 ,  H01S2301/173

公开(公告)号：EP2302747A1

公开(公告)日：2011-03-30

申请号：EP09758596.2

申请日：2009-06-03

申请人： General Nano Optics Limited

发明人： SHVEIKIN, Vasily Ivanovich ,  GELOVANI, Viktor Archilovich ,  SONK, Aleksey Nikolaevich ,  YAREMA, Igor Petrovich

IPC分类号： H01S5/32

CPC分类号： H01S5/0265 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/1064 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/4031 ,  H01S2301/18

摘要： The invention relates to three types of laser light sources: a diode laser, integral diode laser (in the form of integrally connected diode lasers) and an integral semiconductor optical amplifier (in the form of integrally connected driving laser diode and semiconductor amplifier element), which amplifier consists of the original optical resonator of a diode laser and an original laser radiation coupling. Two reflectors in the optical resonator of the diode laser, which falls into the three types of the above-mentioned laser radiation sources, have the greatest possible reflection factor on both sides thereof and the radiation coupling from an active layer is carried out, by-passing the active layer, through broadband semiconductor layers of the inventive modified heterostructure of the diode laser with a practically fully antireflective (less than 0.01%) optical face. The invention makes it possible to design superpower, high-performance, high-speed and reliable three types of sources of single-frequency, single-mode and multi-mode high quality laser radiation in a broad wavelength band, to simplify the production and cut in the production costs thereof.

摘要翻译： 本发明涉及三种类型的激光源：二极管激光器，一体二极管激光器（整体连接的二极管激光器形式）和集成半导体光放大器（以驱动激光二极管和半导体放大器整体连接的形式） 该放大器由二极管激光器的原始光学谐振器和原始激光辐射耦合器组成。 在二极管激光器的光学谐振器中的两个反射器落入上述三种类型的激光辐射源中，在其两侧具有最大可能的反射系数，并且从有源层的辐射耦合被执行， 通过具有实际上完全抗反射（小于0.01％）的光学面的二极管激光器的本发明的改进的异质结构的宽带半导体层使有源层通过。 本发明可以在宽波长范围内设计出超高功率，高性能，高速度，可靠的三种单频，单模和多模高品质激光辐射源，简化了生产和切割 在其生产成本。

公开(公告)号：EP1817524A4

公开(公告)日：2011-02-02

申请号：EP05851700

申请日：2005-11-16

申请人： CANON KK

发明人： CAO JIANG-RONG ,  MIYAWAKI MAMORU

IPC分类号： H01S5/026 ,  G02B6/122 ,  H01L33/00 ,  H01S5/042 ,  H01S5/10 ,  H01S5/40

CPC分类号： H01S5/026 ,  B82Y20/00 ,  G02B6/12007 ,  G02B6/1225 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/105 ,  H01S5/2059 ,  H01S5/221 ,  H01S5/2214 ,  H01S5/2232 ,  H01S5/3211 ,  H01S5/34306 ,  H01S5/34373 ,  H01S5/4031 ,  H01S5/405 ,  H01S5/4087 ,  H04N9/3129

公开(公告)号：EP1841023B1

公开(公告)日：2010-02-17

申请号：EP07104534.8

申请日：2007-03-20

申请人： Eudyna Devices Inc.

发明人： Ishikawa, Tsutomu

IPC分类号： H01S5/026 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/227 ,  H01S5/32 ,  H01S5/12 ,  G02F1/01

CPC分类号： H01S5/0612 ,  H01S5/02453 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S2301/173

公开(公告)号：EP1583190B1

公开(公告)日：2008-12-24

申请号：EP05252041.8

申请日：2005-03-31

申请人： Nichia Corporation

发明人： Matsuyama, Yuji ,  Suzuki, Shinji ,  Ise, Kousuke ,  Michiue, Atsuo ,  Yoneda, Akinori

IPC分类号： H01S5/323 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/0202 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

公开(公告)号：EP1854189A2

公开(公告)日：2007-11-14

申请号：EP06735363.1

申请日：2006-02-17

申请人： Binoptics Corporation

发明人： BEHFAR, Alex, A.

IPC分类号： H01S5/00

CPC分类号： H01S5/323 ,  G02F1/17 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2214

摘要： Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.

公开(公告)号：EP1841023A3

公开(公告)日：2007-10-10

申请号：EP07104534.8

申请日：2007-03-20

申请人： Eudyna Devices Inc.

发明人： Ishikawa, Tsutomu

IPC分类号： H01S5/026 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/227 ,  H01S5/32 ,  H01S5/12 ,  G02F1/01

CPC分类号： H01S5/0612 ,  H01S5/02453 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S2301/173

摘要： An optical semiconductor device (100) has a semiconductor substrate (101), an optical semiconductor region (102) and a heater (103). The optical semiconductor region (102) is provided on the semiconductor substrate (101) and has a width smaller than that of the semiconductor substrate (101). The heater (103) is provided on the optical semiconductor region (102). The optical semiconductor region (102) has a cladding region (104), an optical waveguide layer (105) and a low thermal conductivity layer (106). The optical waveguide layer (105) is provided in the cladding region (104) and has a refractive index higher than that of the cladding region (104). The low thermal conductivity layer (106) is provided between the optical waveguide layer (105) and the semiconductor substrate (101) and has a thermal conductivity lower than that of the cladding region (104).