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    Semiconductor device manufacturing process
    1.
    发明公开
    Semiconductor device manufacturing process 失效
    一种生产用于该方法的半导体装置和ERCVD设备处理。

    公开(公告)号：EP0424905A2

    公开(公告)日：1991-05-02

    申请号：EP90120394.3

    申请日：1990-10-24

    申请人： SONY CORPORATION

    发明人： Sato, Junichi, c/o Sony Corporation ,  Gocho, Tetsuo, c/o Sony Corporation ,  Morita, Yasushi, c/o Sony Corporation

    IPC分类号： H01L21/76 ,  H01L21/316 ,  H01L21/00

    CPC分类号： H01L21/76229 ,  H01L21/31144 ,  Y10S148/05 ,  Y10S438/97

    摘要： A semiconductor device manufacturing process and a bias ECRCVD apparatus for carrying out the same. The semiconductor device manufac­turing process comprises steps of forming trenches in the surface of a substrate, forming an insulating film by bias ECRCVD over the surface of the substrate, etching the insulating film by lateral leveling etching to expand the width of grooves formed in portions of the insulating film formed in regions other than those corresponding to the trenches, masking the portions of the insulating film filling up the trenches and removing the portions of the insulating film formed in the regions other than those corresponding to the trenches. An etching stop layer is formed over the surface of the substrate before forming the trenches and the insulating film, and the etching stop layer is removed by etching after removing the portions of the insulating film formed in the regions other than those corresponding to the trenches by etching with the portions of the insulating film filling up the trenches masked.
    The surfaces of the portions of the insulating film filling up the trenches are finished flush with the surface of the substrate. Desirably, the etching stop layer is annealed to make the grains grow making the surface of the etching stop layer smooth to enable the complete removal of the portions of the insulating film formed in the regions other than those corresponding to the trenches.

    摘要翻译： 一种半导体器件的制造工艺以及用于执行该方法的偏压ECRCVD装置。 半导体器件制造方法包括在基材的表面形成沟槽，在基板的表面上的绝缘膜通过偏压ECRCVD的形成， - 由膜的横向平整蚀刻蚀刻绝缘扩大凹槽中的部分形成的宽度的步骤 绝缘膜形成在除那些对应于沟槽其他区域，掩蔽的部分上的绝缘膜填充了沟槽并除去绝缘膜形成在除那些对应于沟槽以外的区域的部分。 蚀刻停止层被形成沟槽和所述绝缘膜，电影之前形成的基材的表面上，并且蚀刻停止层通过去除绝缘膜形成在除那些由对应于沟槽以外的区域的部分之后刻蚀除去 与绝缘膜填充了沟槽的部分蚀刻掩蔽。 绝缘的部分的表面的膜填充沟槽完成齐平于基材的表面。 理想的是，蚀刻停止层进行退火，以使晶粒生长使蚀刻阻挡层光滑，以使完全除去在除那些对应于沟槽以外的区域的绝缘膜形成的部分的表面上。

    Semiconductor device manufacturing process
    3.
    发明公开
    Semiconductor device manufacturing process 失效
    半导体器件制造工艺和用于实现其的BIAS ECRCVD器件

    公开(公告)号：EP0424905A3

    公开(公告)日：1992-08-12

    申请号：EP90120394.3

    申请日：1990-10-24

    申请人： SONY CORPORATION

    发明人： Sato, Junichi, c/o Sony Corporation ,  Gocho, Tetsuo, c/o Sony Corporation ,  Morita, Yasushi, c/o Sony Corporation

    IPC分类号： H01L21/76 ,  H01L21/316 ,  H01L21/00

    CPC分类号： H01L21/76229 ,  H01L21/31144 ,  Y10S148/05 ,  Y10S438/97

    摘要： A semiconductor device manufacturing process and a bias ECRCVD apparatus for carrying out the same. The semiconductor device manufac­turing process comprises steps of forming trenches in the surface of a substrate, forming an insulating film by bias ECRCVD over the surface of the substrate, etching the insulating film by lateral leveling etching to expand the width of grooves formed in portions of the insulating film formed in regions other than those corresponding to the trenches, masking the portions of the insulating film filling up the trenches and removing the portions of the insulating film formed in the regions other than those corresponding to the trenches. An etching stop layer is formed over the surface of the substrate before forming the trenches and the insulating film, and the etching stop layer is removed by etching after removing the portions of the insulating film formed in the regions other than those corresponding to the trenches by etching with the portions of the insulating film filling up the trenches masked. The surfaces of the portions of the insulating film filling up the trenches are finished flush with the surface of the substrate. Desirably, the etching stop layer is annealed to make the grains grow making the surface of the etching stop layer smooth to enable the complete removal of the portions of the insulating film formed in the regions other than those corresponding to the trenches.