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    A method of preparing a porous semiconductor film on a substrate
    1.
    发明公开
    A method of preparing a porous semiconductor film on a substrate 审中-公开
    Methode zur Herstellung einesporösenHalbleiterfilms auf einem Substrat

    公开(公告)号：EP1933343A1

    公开(公告)日：2008-06-18

    申请号：EP06025828.2

    申请日：2006-12-13

    申请人： SONY DEUTSCHLAND GMBH ,  Sony Corporation

    发明人： Dürr, Michael ,  Nelles, Gabriele ,  Yasuda, Akio ,  Suzuki, Yusuke ,  Noda, Kazuhiro

    IPC分类号： H01G9/20

    CPC分类号： H01G9/2095 ,  H01G9/2031 ,  H01G9/2059 ,  H01L51/003 ,  Y02E10/542

    摘要： A method of preparing a porous semiconductor film on a substrate comprising the steps:
    a) preparing, on a first substrate, an adhesion layer capable of providing electrical and mechanical contact between a porous semiconductor layer attached to said adhesion Iayer arid said first substrate,
    b) applying on a second substrate that is capable of withstanding temperatures >=300°C a spacer Iayer and applying a porous semiconductor layer on said spacer layer,
    c) applying an assisting layer on said porous semiconductor Iayer, said assisting layer providing support for said porous semiconductor layer,
    d) removing said spacer layer
    e) transferring said porous semiconductor Iayer supported by said assisting layer onto said adhesion layer,
    f) pressing said porous semiconductor Iayer onto said adhesion layer,
    g) removing said assisting layer from said porous semiconductor Iayer, thereby obtaining said first substrate having as a porous semiconductor film said porous semiconductor layer attached thereon by way of said adhesion layer.

    摘要翻译： 一种在衬底上制备多孔半导体膜的方法，包括以下步骤：a）在第一衬底上制备能够在附着到所述第一衬底上的多孔半导体层和所述第一衬底之间提供电和机械接触的粘附层， ）施加在能够承受> = 300℃的间隔层的温度的第二基板上，并且在所述间隔层上施加多孔半导体层，c）在所述多孔半导体层上施加辅助层，所述辅助层为所述 多孔半导体层，d）去除所述间隔层e）将由所述辅助层支撑的所述多孔半导体层，转移到所述粘合层上，f）将所述多孔半导体层进行加压到所述粘合层上，g）从所述多孔半导体层 从而获得具有附着有多孔半导体层的多孔半导体膜的所述第一基板 在此通过所述粘附层。