公开(公告)号：EP4345464A1

公开(公告)日：2024-04-03

申请号：EP23196500.5

申请日：2023-09-11

Applicant: STMicroelectronics S.r.l.

Inventor： DE VITA, Placido ,  ABBISSO, Salvatore ,  TORRISI, Giovanni Luca ,  LEONE, Antonio Davide

IPC: G01R1/20 ,  G01R1/44 ,  G01R19/00

Abstract: Described herein is a method for sensing at a pre-driving stage (12) driving one or more Field Effect Transistor (MHx, MLx), in particular MOSFET, comprised in a power stage (13) driving a load (DC1...DC4), a current flowing in said Field Effect Transistor (MHx, MLx), in particular MOSFET, the Field Effect Transistor being arranged external with respect to a chip on which said pre-driving stage (12) is arranged,
said method comprising
measuring (120) a drain to source voltage (VDS_HSx, VDS_LSx), of said one or more Field Effect Transistor (MHX, MLx),
measuring (130) an operating temperature (T W ) of said one or more Field Effect Transistor (MHX, MLx),
measuring (140) a current (IHX, ILx) flowing in said one or more Field Effect Transistor (MHX, MLx) by
calculating (142) the respective on drain to source resistance at the operating temperature (RdsONx(T W )) as a function (RdsONx(T W )) of said measured operating temperature (T W ) and by obtaining (144) said current (IHX, ILx) as the ratio of the respective measured drain to source voltage (VDS_HSx, VDS_LSx) over said calculated drain to source resistance at the operating temperature (RdsONx(T W )).