SILICON SINGLE CRYSTAL PULLING APPARATUS AND METHOD THEREOF
    1.
    发明公开
    SILICON SINGLE CRYSTAL PULLING APPARATUS AND METHOD THEREOF 审中-公开
    VORRICHTUNG UND VEFAHREN ZUM ZIEHEN VON SILICIUMEINKRISTALLEN

    公开(公告)号:EP1908861A1

    公开(公告)日:2008-04-09

    申请号:EP05767033.3

    申请日:2005-07-27

    申请人: SUMCO Corporation

    IPC分类号: C30B29/06 C30B30/04

    摘要: A quartz crucible which stores a silicon melt is rotated at a predetermined rotation speed, and a silicon single crystal ingot pulled from the melt is rotated at a predetermined rotation speed. A first coil and a second coil are installed with a predetermined spacing in between such that a center of each of the coils corresponds to a rotation center of the crucible. A magnetic field is generated by energizing electric currents in the first and second coils in the same direction. The first coil is installed outside the chamber and the second coil is installed inside the chamber. A center position of the predetermined spacing between the first coil and the second coil is controlled at the same or a lower level as the surface of the silicon melt such that a distance of the center position from the surface of the silicon melt is 0 mm or more and 10000 mm or less.

    摘要翻译: 存储硅熔体的石英坩埚以预定旋转速度旋转,并且从熔体拉出的硅单晶锭以预定转速旋转。 第一线圈和第二线圈之间以预定的间隔安装,使得每个线圈的中心对应于坩埚的旋转中心。 通过在相同方向上激励第一和第二线圈中的电流来产生磁场。 第一线圈安装在腔室外部,第二线圈安装在腔室内。 将第一线圈和第二线圈之间的预定间隔的中心位置控制在与硅熔体的表面相同或更低的水平处,使得中心位置与硅熔体的表面的距离为0mm或 多于10000毫米或更小。