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1.发明公开METHOD FOR MEASURING WITHSTAND VOLTAGE OF SEMICONDUCTOR EPITAXIAL WAFER AND SEMICONDUCTOR EPITAXIAL WAFER 审中-公开法测量更广泛的承受半导体晶片和外延半导体外延生长基板
公开(公告)号：EP1503408A4
公开(公告)日：2009-08-12
申请号：EP03703038
申请日：2003-01-23
发明人： AKITA KATSUSHI , YAMASHITA MASASHI , KIYAMA MAKOTO
IPC分类号： G01R31/26 , H01L21/66 , H01L23/544
摘要： A method for measuring the withstand voltage of a semiconductor epitaxial wafer easily and a semiconductor epitaxial wafer exhibiting an excellent withstand voltage. In the method for measuring the withstand voltage of a semiconductor epitaxial wafer (10), withstand voltage between electrodes (12, 12) is measured using only a Schottky electrode without requiring any ohmic electrode. Since a process for forming an ohmic electrode can be eliminated, the semiconductor epitaxial wafer (10) can undergo a withstand voltage measuring test easily. Consequently, the withstand voltage of the semiconductor epitaxial wafer (10) can be measured easily. Furthermore, an unqualified wafer (10) can be removed before being delivered to an actual device fabrication process because the withstand voltage V2 between electrodes can be measured before an actual device is fabricated from the wafer (10). Consequently, loss can be reduced as compared with a conventional method where the withstand voltage V2 between electrodes is measured after an actual device is fabricated.
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