-
1.发明公开
公开(公告)号：EP0566499A2
公开(公告)日：1993-10-20
申请号：EP93400993.7
申请日：1993-04-16
IPC分类号： G01R33/035
CPC分类号： G01R33/0358 , Y10S505/702 , Y10S505/832 , Y10S505/846 , Y10S505/874 , Y10S505/922
摘要： A SQUID comprises a substrate, a washer of an oxide superconductor thin film formed on a principal surface of the substrate, a hole shaped a similar figure to the washer at the center of the washer, a slit formed between one side of the washer and the hole, and a Josephson junction which connects portions of the washer at the both sides of the slit across the slit. In the SQUID, the ratio of similarity of the washer to the hole ranges 100 to 2500.
摘要翻译： SQUID包括基板，形成在基板的主表面上的氧化物超导体薄膜的垫圈，与垫圈中心处的垫圈相似的孔，在垫圈的一侧和 孔和约瑟夫逊结，该连接部将切口两侧的垫圈的部分连接在狭缝上。 在SQUID中，洗衣机与孔的相似度的比率范围为100至2500.
-
公开(公告)号：EP0566499A3
公开(公告)日：1994-09-28
申请号：EP93400993.7
申请日：1993-04-16
IPC分类号： G01R33/035
CPC分类号： G01R33/0358 , Y10S505/702 , Y10S505/832 , Y10S505/846 , Y10S505/874 , Y10S505/922
摘要： A SQUID comprises a substrate, a washer of an oxide superconductor thin film formed on a principal surface of the substrate, a hole shaped a similar figure to the washer at the center of the washer, a slit formed between one side of the washer and the hole, and a Josephson junction which connects portions of the washer at the both sides of the slit across the slit. In the SQUID, the ratio of similarity of the washer to the hole ranges 100 to 2500.
-
3.发明公开Process for preparing a thallium-type compound oxide superconductor 失效Verfahren zum Herstellen eines Mischoxid-Supraleiters vom Thallium-Typ。
公开(公告)号：EP0357509A1
公开(公告)日：1990-03-07
申请号：EP89402370.4
申请日：1989-08-30
发明人： Itozaki, Hideo c/o Itami Works of , Harada, Keizo c/o Itami Works of , Oyama, Hitoshi c/o Itami Works of , Yazu, Shuji c/o Itami Works of
CPC分类号： C04B35/4512 , C23C14/087 , H01L39/2451 , H01L39/2477
摘要： A novel process for preparing superconductor of thallium-containing compound oxide such as Tl-Ba-Ca-Cu system.
In the present invention, firstly an intermediate compound oxide containing metal elements of the superconductor except thallium is prepared and then the intermediate compound oxide is contacted with thallium oxide vapour at room temperature between 800 and 1,000 °C so that thallium oxide is reacted with said intermediate compound oxide.摘要翻译： 一种制备含铊复合氧化物如Tl-Ba-Ca-Cu体系的超导体的新方法。 在本发明中，首先制备含有铊以外的超导体的金属元素的中间体复合氧化物，然后使中间复合氧化物与氧化钌蒸气在800〜1000℃之间室温下接触，使得氧化铊与所述中间体 复合氧化物。
-
公开(公告)号：EP0566499B1
公开(公告)日：1998-12-02
申请号：EP93400993.7
申请日：1993-04-16
IPC分类号： G01R33/035
CPC分类号： G01R33/0358 , Y10S505/702 , Y10S505/832 , Y10S505/846 , Y10S505/874 , Y10S505/922
-
-
-
搜索结果
4 条记录 (耗时 0.01 秒)
