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公开(公告)号：EP0713240B1
公开(公告)日：2004-10-13
申请号：EP95305882.3
申请日：1995-08-23
发明人： Adachi, Kenji , Yamanaka, Atsushi , Toufuku, Atsushi , Iida, Sadahiro , Yukinobu, Masaya , Orita, Keiichi , Inage, Hiroko , Takeda, Hiromitsu
CPC分类号： H05K9/0096 , C03C2217/45 , C03C2217/476 , H01B1/14 , H01B1/20 , H01J29/868
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2.发明公开Transparent conductor film for electric field shielding 失效Transparente Leiterschicht zur elektrischen Feldabschirmung
公开(公告)号：EP0713240A3
公开(公告)日：1997-01-08
申请号：EP95305882.3
申请日：1995-08-23
发明人： Adachi, Kenji , Yamanaka, Atsushi , Toufuku, Atsushi , Iida, Sadahiro , Yukinobu, Masaya , Orita, Keiichi , Inage, Hiroko , Takeda, Hiromitsu
CPC分类号： H05K9/0096 , C03C2217/45 , C03C2217/476 , H01B1/14 , H01B1/20 , H01J29/868
摘要： A thin conductive film, which excels in film strength, weather resistance, transparency, and electric field shielding effect, is formed on a glass substrate at a low temperature as a multilayer film consisting of two layers of an ITO dispersed silicate layer and an overcoat silicate layer, or three or more layers, of which at least two layers are an ITO dispersed silicate layer and a high-conductivity oxide dispersed silicate layer, and the topmost layer is an overcoat silicate layer. The ITO dispersed silicate layer is essentially consists of ultra fine particles of indium tin oxide and a silicate-based glass matrix, and the high-conductivity oxide dispersed silicate layer consists of one or more among ultra fine particles selected from a group of ruthenium dioxide, rhenium trioxide, iridium dioxide, rhodium dioxide and irridium-based pyrochlore and a silicate-based glass matrix.
摘要翻译： 在低温玻璃基板上形成薄膜强度，耐候性，透明性和电场屏蔽效果优异的薄导电膜，作为由两层ITO分散硅酸盐层和外涂层硅酸盐组成的多层膜 层或三层或更多层，其中至少两层是ITO分散的硅酸盐层和高导电性氧化物分散的硅酸盐层，最上层是外涂层硅酸盐层。 ITO分散硅酸盐层主要由铟锡氧化物和硅酸盐系玻璃基体的超细粒子组成，高导电性氧化物分散硅酸盐层由选自二氧化钌， 三氧化钌，二氧化铱，二氧化铑和基于铱的烧绿石和硅酸盐基玻璃基质。
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公开(公告)号：EP0713240A2
公开(公告)日：1996-05-22
申请号：EP95305882.3
申请日：1995-08-23
发明人： Adachi, Kenji , Yamanaka, Atsushi , Toufuku, Atsushi , Iida, Sadahiro , Yukinobu, Masaya , Orita, Keiichi , Inage, Hiroko , Takeda, Hiromitsu
CPC分类号： H05K9/0096 , C03C2217/45 , C03C2217/476 , H01B1/14 , H01B1/20 , H01J29/868
摘要： A thin conductive film, which excels in film strength, weather resistance, transparency, and electric field shielding effect, is formed on a glass substrate at a low temperature as a multilayer film consisting of two layers of an ITO dispersed silicate layer and an overcoat silicate layer, or three or more layers, of which at least two layers are an ITO dispersed silicate layer and a high-conductivity oxide dispersed silicate layer, and the topmost layer is an overcoat silicate layer.
The ITO dispersed silicate layer is essentially consists of ultra fine particles of indium tin oxide and a silicate-based glass matrix, and the high-conductivity oxide dispersed silicate layer consists of one or more among ultra fine particles selected from a group of ruthenium dioxide, rhenium trioxide, iridium dioxide, rhodium dioxide and irridium-based pyrochlore and a silicate-based glass matrix.
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