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1.发明公开Memory array with sub-minimum feature size word line spacing and method of fabrication 审中-公开Speistherzellenanordnung mit sub-minimalem Wortleitungsabstand und Verfahren zu deren Herstellung
公开(公告)号：EP1746645A2
公开(公告)日：2007-01-24
申请号：EP06117424.9
申请日：2006-07-18
发明人： Eitan, Boaz , Bloom, Ilan , Irani, Rustom
IPC分类号： H01L21/8246 , H01L27/115
CPC分类号： H01L27/115 , H01L21/0337 , H01L21/0338 , H01L21/28123 , H01L21/31144 , H01L21/32139 , H01L27/0207 , H01L27/11519 , H01L27/11521 , H01L27/11568 , H01L29/792 , H01L29/7923 , H01L2924/0002 , H01L2924/00
摘要： A non-volatile memory array (30) has word lines (32) spaced a sub-F (sub-minimum feature size F) width apart and bit lines generally perpendicular to the word lines. The present invention also includes a method for word-line patterning of a non-volatile memory array which includes generating sub-F word lines from mask generated elements with widths of at least a minimum feature size F.
摘要翻译： 非易失性存储器阵列（30）具有间隔开的子F（子最小特征尺寸F）宽度的字线（32），并且大致垂直于字线的位线。 本发明还包括用于非易失性存储器阵列的字线图案化的方法，其包括从具有至少最小特征尺寸F的宽度的掩模生成元素生成子F字线。
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2.发明公开Memory array with sub-minimum feature size word line spacing and method of fabrication 审中-公开具有亚最小字线间距的存储器单元结构，并且它们的制备方法
公开(公告)号：EP1746645A3
公开(公告)日：2009-01-21
申请号：EP06117424.9
申请日：2006-07-18
发明人： Eitan, Boaz , Bloom, Ilan , Irani, Rustom
IPC分类号： H01L21/8246 , H01L27/115 , H01L21/033 , H01L21/3213
CPC分类号： H01L27/115 , H01L21/0337 , H01L21/0338 , H01L21/28123 , H01L21/31144 , H01L21/32139 , H01L27/0207 , H01L27/11519 , H01L27/11521 , H01L27/11568 , H01L29/792 , H01L29/7923 , H01L2924/0002 , H01L2924/00
摘要： A non-volatile memory array (30) has word lines (32) spaced a sub-F (sub-minimum feature size F) width apart and bit lines generally perpendicular to the word lines. The present invention also includes a method for word-line patterning of a non-volatile memory array which includes generating sub-F word lines from mask generated elements with widths of at least a minimum feature size F.
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