公开(公告)号：EP3975550A1

公开(公告)日：2022-03-30

申请号：EP21203454.0

申请日：2020-09-14

申请人： Samsung Electronics Co., Ltd.

发明人： KIM, Seoksan ,  SEO, Minwoong ,  CHU, Myunglae ,  LEE, Jong-yeon ,  CHOI, Min-Jun

IPC分类号： H04N5/3745 ,  H04N5/369 ,  H01L27/146 ,  H04N5/357 ,  H04N5/378 ,  H04N5/335 ,  G11C8/14 ,  H01L23/48 ,  H01L23/528 ,  G11C13/00 ,  G11C16/04

摘要： An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.

公开(公告)号：EP4131941A1

公开(公告)日：2023-02-08

申请号：EP22187800.2

申请日：2022-07-29

申请人： Samsung Electronics Co., Ltd.

发明人： SEO, Minwoong ,  JUNG, Hyunyong ,  BAE, Daehee ,  CHU, Myunglae

IPC分类号： H04N5/3745 ,  H04N5/369 ,  H04N5/235 ,  H04N5/355 ,  H04N5/357

摘要： Provided is a pixel array including a plurality of pixels, each of which includesa photodiode configured to generate a photocharge in a frame including a plurality of unit frames, a floating diffusion node configured to receive the photocharge, a first storage capacitor configured to receive and store a first photocharge generated by the photodiode through the floating diffusion node during a first unit accumulation time period in each of the plurality of unit frames, and a second storage capacitor configured to receive and store a second photocharge generated by the photodiode through the floating diffusion node during a second unit accumulation time period in each of the plurality of unit frames.

公开(公告)号：EP4113978A3

公开(公告)日：2023-04-05

申请号：EP22172019.6

申请日：2022-05-06

申请人： Samsung Electronics Co., Ltd.

发明人： JUNG, Hyunyong ,  KIM, Seoksan ,  SEO, Minwoong ,  CHU, Myunglae

IPC分类号： H01L27/146

摘要： An image sensor includes a pixel having an internal capacitor. Each of a plurality of pixels of the image sensor includes a photodetection circuit and an analog-to-digital converter (ADC). The photodetection circuit generates a detection signal. The ADC converts the detection signal using a ramp signal. The photodetection circuit includes a photodiode, a floating diffusion node and an overflow transistor. The floating diffusion node accumulates photocharges generated by the photodiode and includes a parasitic capacitor. The overflow transistor electrically connects the floating diffusion node to a first internal capacitor of the ADC.

公开(公告)号：EP4113978A2

公开(公告)日：2023-01-04

申请号：EP22172019.6

申请日：2022-05-06

申请人： Samsung Electronics Co., Ltd.

发明人： JUNG, Hyunyong ,  KIM, Seoksan ,  SEO, Minwoong ,  CHU, Myunglae

IPC分类号： H04N5/355 ,  H04N5/3745

摘要： An image sensor includes a pixel having an internal capacitor. Each of a plurality of pixels of the image sensor includes a photodetection circuit and an analog-to-digital converter (ADC). The photodetection circuit generates a detection signal. The ADC converts the detection signal using a ramp signal. The photodetection circuit includes a photodiode, a floating diffusion node and an overflow transistor. The floating diffusion node accumulates photocharges generated by the photodiode and includes a parasitic capacitor. The overflow transistor electrically connects the floating diffusion node to a first internal capacitor of the ADC.

公开(公告)号：EP3799425A1

公开(公告)日：2021-03-31

申请号：EP20196076.2

申请日：2020-09-14

申请人： Samsung Electronics Co., Ltd.

发明人： KIM, Seoksan ,  SEO, Minwoong ,  CHU, Myunglae ,  LEE, Jong-yeon ,  CHOI, Min-Jun

IPC分类号： H04N5/3745 ,  H04N5/369 ,  H01L27/146 ,  H04N5/357 ,  H04N5/378 ,  H04N5/335 ,  G11C8/14

摘要： An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.