公开(公告)号：EP3975550A1

公开(公告)日：2022-03-30

申请号：EP21203454.0

申请日：2020-09-14

申请人： Samsung Electronics Co., Ltd.

发明人： KIM, Seoksan ,  SEO, Minwoong ,  CHU, Myunglae ,  LEE, Jong-yeon ,  CHOI, Min-Jun

IPC分类号： H04N5/3745 ,  H04N5/369 ,  H01L27/146 ,  H04N5/357 ,  H04N5/378 ,  H04N5/335 ,  G11C8/14 ,  H01L23/48 ,  H01L23/528 ,  G11C13/00 ,  G11C16/04

摘要： An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.

公开(公告)号：EP3799425A1

公开(公告)日：2021-03-31

申请号：EP20196076.2

申请日：2020-09-14

申请人： Samsung Electronics Co., Ltd.

发明人： KIM, Seoksan ,  SEO, Minwoong ,  CHU, Myunglae ,  LEE, Jong-yeon ,  CHOI, Min-Jun

IPC分类号： H04N5/3745 ,  H04N5/369 ,  H01L27/146 ,  H04N5/357 ,  H04N5/378 ,  H04N5/335 ,  G11C8/14

摘要： An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.