EYEGLASS-TYPE WEARABLE DEVICE PROVIDING AUGMENTED REALITY GUIDE, AND METHOD FOR CONTROLLING SAME

    公开(公告)号:EP4283377A1

    公开(公告)日:2023-11-29

    申请号:EP22845998.8

    申请日:2022-03-29

    Abstract: Provided are an eyeglass-type wearable device that provides an augmented reality guide, and a method for controlling same. The eyeglass-type wearable device comprises: a communication circuit; a camera; and a processor, wherein the processor may be configured to: while acquiring a first surrounding image of the eyeglass-type wearable device by means of the camera, receive, from an external electronic device connected to the eyeglass-type wearable device, a second surrounding image of the external electronic device that is obtained by the external electronic device, through a communication module; identify a first task being performed by a user of the eyeglass-type wearable device by using the first surrounding image; identify a second task being performed by the user of the external electronic device by using the second surrounding image; identify a difference between a current progress status of the first task and the second task; and cause the communication module on the basis of the difference in the identified progress status to provide an augmented reality (AR) guide corresponding to the second task to the external electronic device.

    NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

    公开(公告)号:EP4395495A1

    公开(公告)日:2024-07-03

    申请号:EP23213126.8

    申请日:2023-11-29

    CPC classification number: H10B43/27 H10B43/50 H10B43/40 H10B43/10

    Abstract: A non-volatile memory device includes a substrate, a mold structure including a plurality of gate electrodes and a plurality of mold insulating layers, wherein the plurality of gate electrodes are stacked in a step shape, a channel structure that extends through the mold structure, and a cell contact that extends through the mold structure, the cell contact is connected to a first gate electrode, and the cell contact is not electrically connected to a second gate electrode among the plurality of gate electrodes, wherein the first gate electrode includes: an extension portion; a pad portion having a vertical thickness greater than a vertical thickness of the extension portion; and a connection portion that electrically connects the pad portion to the cell contact, the connection portion has a vertical thickness less than a vertical thickness of the pad portion, and one or more first insulating rings on the connection portion.

    SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

    公开(公告)号:EP4329457A1

    公开(公告)日:2024-02-28

    申请号:EP23182857.5

    申请日:2023-06-30

    Abstract: A semiconductor device includes a conductive pattern, an insulating pattern, a channel film extending in a vertical direction inside a channel hole, a charge trap pattern between the conductive pattern and the channel film inside the channel hole, a tunneling dielectric film between the charge trap pattern and the channel film, and a blocking dielectric film extending between the conductive pattern and the charge trap pattern and between the insulating pattern and the tunneling dielectric film. The insulating pattern includes a first insulating pattern overlapping the conductive pattern in the vertical direction and a second insulating pattern protruding in the lateral direction from the first insulating pattern into the channel hole and toward the channel film. The first insulating pattern has a first dielectric constant, and the second insulating pattern has a second dielectric constant that is lower than the first dielectric constant.

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