公开(公告)号：EP4411799A1

公开(公告)日：2024-08-07

申请号：EP23192885.4

申请日：2023-08-23

申请人： Samsung Electronics Co., Ltd.

发明人： LEE, Sangbong ,  NAM, Seowoo ,  SEO, Sungho ,  KANG, Seokmyeong ,  CHOI, KyuHoon ,  HA, Seungseok

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76897 ,  H01L23/53295 ,  H01L23/5226 ,  H01L21/76834

摘要： A semiconductor device includes: a first interlayer insulating layer (10) disposed on a substrate; a first conductive line (Ma1) disposed in the first interlayer insulating layer (10) and having a protrusion protruding above an upper side of the first interlayer insulating layer (10); an etch stop layer (30) disposed on the first interlayer insulating layer (10) and the first conductive line (Ma1); and a via (50) passing through the etch stop layer (30) and contacting the first conductive line (Ma1), wherein the etch stop layer (30) includes a first etch stop layer (31) having a curved shape in a cross-sectional view and a second etch stop layer (32) disposed on the first etch stop layer (31) and having a thickness variation.