NON-VOLATILE MEMORY DEVICE FOR DETECTING DEFECTS OF BIT LINES AND WORD LINES

    公开(公告)号:EP4181143A3

    公开(公告)日:2023-07-26

    申请号:EP22206068.3

    申请日:2022-11-08

    IPC分类号: G11C29/02 G11C29/12

    摘要: Provided is a non-volatile memory device. The non-volatile memory device includes: a memory cell array including cell strings, each including memory cells respectively connected to word lines; a page buffer circuit including page buffers respectively connected to the memory cells through bit lines, wherein a first page buffer is connected to a first cell string through a first bit line; a control logic circuit configured to control a pre-sensing operation to disconnect the first bit line and the first cell string from each other during a pre-sensing period for detecting a defect of the first bit line and control a post-sensing operation to connect the first bit line and the first cell string to each other in a post-sensing period for detecting defects of the word lines and the first bit line; and a defect detection circuit configured to detect defects of the word lines based the sensing operations.

    METHOD AND APPARATUS WITH IMAGE PROCESSING
    2.
    发明公开

    公开(公告)号:EP4181056A1

    公开(公告)日:2023-05-17

    申请号:EP22207450.2

    申请日:2022-11-15

    IPC分类号: G06T5/00

    摘要: The present disclosure concerns a processor-implemented method with image processing which includes providing retouch result candidates of an input image (101) to a user in response to applying vector value candidates to a style vector (103), determining a vector value of the style vector based on a selection of the user for the retouch result candidates, determining an adjustment parameter set (104) corresponding to the determined vector value of the style vector, and generating a retouch result (105) by adjusting the input image based on the adjustment parameter set.

    METHOD AND DEVICE WITH AUTOMATIC LABELING
    5.
    发明公开

    公开(公告)号:EP4365776A1

    公开(公告)日:2024-05-08

    申请号:EP23207770.1

    申请日:2023-11-03

    摘要: A processor-implemented method includes training a first model to predict confidences of labels for data samples in a training dataset, including using a corrected data sample obtained by correcting an incorrect label based on a corresponding confidence detected by the first model and an estimated corrected label generated by a second model; training the second model to estimate correct labels for the data samples, including estimating a correct other label corresponding to another incorrect label detected based on a corresponding confidence generated by the first model with respect to the other incorrect label; and automatically correcting the other incorrect label with the estimated correct other label.

    NON-VOLATILE MEMORY DEVICE FOR DETECTING DEFECTS OF BIT LINES AND WORD LINES

    公开(公告)号:EP4181143A2

    公开(公告)日:2023-05-17

    申请号:EP22206068.3

    申请日:2022-11-08

    IPC分类号: G11C29/02

    摘要: Provided is a non-volatile memory device. The non-volatile memory device includes: a memory cell array including cell strings, each including memory cells respectively connected to word lines; a page buffer circuit including page buffers respectively connected to the memory cells through bit lines, wherein a first page buffer is connected to a first cell string through a first bit line; a control logic circuit configured to control a pre-sensing operation to disconnect the first bit line and the first cell string from each other during a pre-sensing period for detecting a defect of the first bit line and control a post-sensing operation to connect the first bit line and the first cell string to each other in a post-sensing period for detecting defects of the word lines and the first bit line; and a defect detection circuit configured to detect defects of the word lines based the sensing operations.