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公开(公告)号：EP3863017A1
公开(公告)日：2021-08-11
申请号：EP21155075.1
申请日：2021-02-03
发明人： LEE, Kwangwoo , HONG, Jinwoo , LEE, Yunjung
摘要： Described is a storage device that includes a nonvolatile memory device that includes a first storage area and a second storage area. A controller of the storage device controls the nonvolatile memory device and performs a read reclaim operation of reading data stored in the first storage area of the nonvolatile memory device and writing the read data in the second storage area. In the read reclaim operation, the controller is further configured to allow the nonvolatile memory device to perform sample read operations on the first storage area and to determine locations of the second storage area, at which the data are to be written, based on results of the sample read operations.
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公开(公告)号：EP4181136A1
公开(公告)日：2023-05-17
申请号：EP22184395.6
申请日：2022-07-12
发明人： LEE, Yunjung , KANG, Hee-Woong
摘要： A storage device includes a nonvolatile memory device and a memory controller allowing the nonvolatile memory device to perform a read operation on memory cells belonging to a selected page in a selected memory block. After the read operation, the memory controller allows the nonvolatile memory device to perform a first check read operation on memory cells of a first neighbor page while sequentially selecting sets of read voltages. After the first check read operation, the memory controller allows the nonvolatile memory device to perform a second check read operation on memory cells of a second neighbor page while sequentially selecting the sets of read voltages. In the second check read operation, the memory controller first selects a set of read voltages, which are used in the first check read operation in which error correction succeeds.
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公开(公告)号：EP3828891A1
公开(公告)日：2021-06-02
申请号：EP20208778.9
申请日：2020-11-19
发明人： HONG, Jinwoo , KIM, Chanha , ROH, Kangho , RO, Seungkyung , LEE, Yunjung , LEE, Heewon
摘要： A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.
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4.发明公开
公开(公告)号：EP3783614A1
公开(公告)日：2021-02-24
申请号：EP20175208.6
申请日：2020-05-18
发明人： LEE, Yunjung , KIM, Chanha , ROH, Kangho , LEE, Heewon
摘要： A nonvolatile memory device including: a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits; and a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.
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公开(公告)号：EP3637421A1
公开(公告)日：2020-04-15
申请号：EP19193482.7
申请日：2019-08-23
发明人： LEE, Kwangwoo , KIM, Chanha , LEE, Yunjung , KIM, Jisoo , RO, Seungkyung , LEE, Jinwook , LEE, Heewon
摘要： Described is a storage device which includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.
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